P0102BL Datasheet PDF - ST Microelectronics

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P0102BL
ST Microelectronics

Part Number P0102BL
Description 0.25A SCRs
Page 5 Pages


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®
SENSITIVE
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
0.25
200
200
Unit
A
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the
PO102BL SCR is suitable for all applications
where the available gate current is limited such as
stand-by mode power supplies, smoke and alarm
detectors...
Available in SOT-23, it provides optimized space
saving on high density printed circuit boards.
P0102BL
0.25A SCRs
A
G
K
A
G
K
SOT-23
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tamb = 30°C
Tamb = 30°C
Tj = 25°C
Tj = 25°C
Value
0.25
0.17
7
6
0.18
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
0.5
0.02
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
September 2000 - Ed: 3
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
Test Conditions
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50 mA RGK = 1k
IG = 1 mA RGK = 1k
VD = 67 % VDRM RGK = 1k
ITM = 0.4 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
THERMAL RESISTANCES
Symbol
Rth(j-a)
Parameter
Junction to ambient (mounted on FR4 with recommended pad layout)
P0102BL
P0102BL
200
0.8
0.1
8
6
7
200
1.7
1.0
1000
1
100
Unit
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
Value
400
Unit
°C/W
PRODUCT SELECTOR
Part Number
P0102BL
Voltage
200 V
Sensitivity
200 µA
Package
SOT-23
ORDERING INFORMATION
SENSITIVE
SCR
SERIES
P
CURRENT: 0.25A
01 02 B L Blank 5AA4
SENSITIVITY:
02: 200µA
VOLTAGE:
B: 200V
PACKAGE:
L: SOT-23
PACKING MODE:
Tape & Reel
OTHER INFORMATION
Part Number
P0102BL
Marking
P2B
Weight
0.01 g
Base quantity
3000
Packing mode
Tape & reel
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P0102BL
Fig. 1: Maximum average power dissipation
versus average on-state current.
P(W)
0.30
0.28 α = 180 °
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
360 °
0.06
0.04
0.02
IT(av)(A)
α
0.00
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1k]
20
18
16
14
12
10
8
6
4
2
0
1E-2
Rgk(kΩ)
1E-1
1E+0
1E+1
Fig. 2: Average and D.C. on-state current versus
ambient temperature.
IT(av)(A)
0.30
0.25
D.C
0.20
0.15
α = 180°
0.10
0.05
0.00
0
25
Tamb(°C)
50 75
100 125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C]
6
5
4
3 IGT
2
1
Tj(°C)
IH & IL
(Rgk = 1k )
0
-40 -20 0 20 40 60 80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt[Rgk = 1k]
10.0
1.0
Rgk(kΩ)
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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P0102BL
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt [Rgk = 1k ]
10
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 1k
8
6
4
2
Cgk(nF)
0
01234567
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM(A),I 2t(A2s)
100.0
10.0
Tj initial = 25 °C
ITSM
1.0
0.1
0.01
tp(ms)
0.10 1.00
I2t
10.00
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm).
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
7
6
5
4
3
2
1
0
1
Number of cycles
10 100
1000
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
1E+1
Tj max.:
Vto = 1.00 V
Rd = 1
1E+0 Tj = Tj max.
1E-1
Tj = 25°C
VTM(V)
1E-2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Rth(j-a) (°C/W)
500
400
300
200
100
0
0
S (mm2)
10 20 30 40 50 60 70 80 90 100
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