OBTS149 Datasheet PDF - Siemens Semiconductor Group


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OBTS149
Siemens Semiconductor Group

Part Number OBTS149
Description Smart Lowside Power Switch
Page 10 Pages

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HITFET®BTS 149
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Thermal Shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Status feedback with external input resistor
Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
18 m
30 A
19 A
6000 mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
V bb
+
LOAD
1
IN
dv/dt
limitation
Current
lim itation
Overvoltage
protection
Drain
2
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
HITFET®
3
Semiconductor Group
Page 1
M
13.07.1998



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BTS 149
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Drain source voltage
Drain source voltage for short circuit protection
Continuous input current 1)
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V
VDS
VDS(SC)
IIN
Operating temperature
Tj
Storage temperature
Tstg
Power dissipation
Ptot
TC = 25 °C
Unclamped single pulse inductive energy
ID(ISO) = 19 A
EAS
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 , ID=0,5*19A
td = 400 ms, RI = 2 , ID= 19A
VLD
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
Value
60
32
no limit
| IIN | 2
- 40 ... +150
- 55 ... +150
178
6000
3000
110
92
E
40/150/56
Unit
V
mA
°C
W
mJ
V
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB: 3)
RthJC
RthJA
RthJA
0.7 K/W
75
45
1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
Semiconductor Group
Page 2
13.07.1998



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BTS 149
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
Tj = - 40 ...+ 150°C, ID = 10 mA
Off state drain current
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
Input threshold voltage
ID = 3,9 mA
VDS(AZ)
IDSS
VIN(th)
Input current - normal operation, ID<ID(lim):
IIN(1)
VIN = 10 V
Input current - current limitation mode, ID=ID(lim): IIN(2)
VIN = 10 V
Input current - after thermal shutdown, ID=0 A: IIN(3)
VIN = 10 V
Input holding current after thermal shutdown
Tj = 25 °C
IIN(H)
Tj = 150 °C
On-state resistance
ID = 19 A, VIN = 5 V, Tj = 25 °C
ID = 19 A, VIN = 5 V, Tj = 150 °C
On-state resistance
ID = 19 A, VIN = 10 V, Tj = 25 °C
ID = 19 A, VIN = 10 V, Tj = 150 °C
RDS(on)
RDS(on)
Nominal load current (ISO 10483)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
ID(ISO)
Values
Unit
min. typ. max.
60 - 73 V
- - 25 µA
1.3 1.7 2.2 V
- - 100 µA
- 400 1000
1500 3000 6000
500 -
300 -
- 18
- 30
- 14
- 25
19
-
-
m
22
44
m
18
36
A
Semiconductor Group
Page 3
13.07.1998



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Electrical Characteristics
Parameter
at Tj=25°C, unless otherwise specified
Characteristics
Initial peak short circuit current limit
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 1 , VIN = 0 to 10 V, Vbb = 12 V
Turn-off time VIN to 10% ID:
RL = 1 , VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
RL = 1 , VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 1 , VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
ID = 19 A, Tj = 25 °C, Vbb = 32 V
ID = 19 A, Tj = 150 °C, Vbb = 32 V
Inverse Diode
Inverse diode forward voltage
IF = 5*19A, tm = 300 µs, VIN = 0 V
BTS 149
Symbol
Values
Unit
min. typ. max.
ID(SCp)
ID(lim)
- 130 - A
30 40 55
ton -
toff -
-dVDS/dton -
dVDS/dtoff
-
40 100 µs
70 170
1 3 V/µs
13
Tjt 150 165 - °C
EAS mJ
6000 -
-
1800 -
-
VSD - 1.1 - V
1Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
Semiconductor Group
Page 4
13.07.1998




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