NX3V1T66 Datasheet PDF - NXP Semiconductors

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NX3V1T66
NXP Semiconductors

Part Number NX3V1T66
Description Low-voltage analog switch
Page 18 Pages


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NX3V1T66
Low-voltage analog switch
Rev. 02 — 24 July 2008
Product data sheet
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1. General description
The NX3V1T66 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is
LOW, the analog switch is turned off.
A low input voltage threshold allows pin E to be driven by lower level logic signals without
a significant increase in supply current ICC. This makes it possible for the NX3V1T66 to
switch 3.6 V signals with a 1.8 V digital controller, eliminating the need for logic level
translation.
The NX3V1T66 allows signals with amplitude up to VCC to be transmitted from Y to Z or
from Z to Y. Its ultra-low ON resistance (0.3 ) and flatness (0.1 ) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
I Wide supply voltage range from 1.4 V to 3.6 V
I Very low ON resistance (peak):
N 0.8 (typical) at VCC = 1.4 V
N 0.5 (typical) at VCC = 1.65 V
N 0.3 (typical) at VCC = 2.3 V
N 0.25 (typical) at VCC = 2.7 V
I High noise immunity
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 7500 V
N MM JESD22-A115-A exceeds 200 V
N CDM AEC-Q100-011 revision B exceeds 1000 V
I CMOS low-power consumption
I Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
I Enable input accepts voltages above supply voltage
I 1.8 V control logic at VCC = 3.6 V
I High current handling capability (500 mA continuous current under 3.3 V supply)
I Specified from 40 °C to +85 °C and from 40 °C to +125 °C
3. Applications
I Cell phone
I PDA
I Portable media player



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NXP Semiconductors
NX3V1T66
Low-voltage analog switch
4. Ordering information
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Table 1. Ordering information
Type number
Package
Temperature range Name Description
NX3V1T66GW
40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
NX3V1T66GM
40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 1 × 1.45 × 0.5 mm
Version
SOT353-1
SOT886
5. Marking
Table 2. Marking
Type number
NX3V1T66GW
NX3V1T66GM
6. Functional diagram
Marking code
dO
dO
E
Z
Fig 1. Logic symbol
Y
001aag487
7. Pinning information
7.1 Pinning
NX3V1T66
Y1
5 VCC
Z2
GND 3
4E
001aai591
Fig 3. Pin configuration SOT353-1 (TSSOP5)
Y
E
Fig 2. Logic diagram
Z
001aah372
NX3V1T66
Y1
6 VCC
Z2
5 n.c.
GND 3
4E
001aah555
Transparent top view
Fig 4. Pin configuration SOT886 (XSON6)
NX3V1T66_2
Product data sheet
Rev. 02 — 24 July 2008
© NXP B.V. 2008. All rights reserved.
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NXP Semiconductors
NX3V1T66
Low-voltage analog switch
7.2 Pin description
www.dTaatabslehe3e.t4u.cPomin description
Symbol
Pin
SOT353-1
Y1
Z2
GND
3
E4
n.c. -
VCC
5
SOT886
1
2
3
4
5
6
8. Functional description
Description
independent input or output
independent output or input
ground (0 V)
enable input (active HIGH)
not connected
supply voltage
Table 4.
Input E
L
H
Function table[1]
[1] H = HIGH voltage level; L = LOW voltage level.
9. Limiting values
Switch
OFF-state
ON-state
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC supply voltage
VI input voltage
enable input E
VSW switch voltage
IIK input clamping current VI < 0.5 V
ISK switch clamping current VI < 0.5 V or VI > VCC + 0.5 V
ISW switch current
VSW > 0.5 V or VSW < VCC + 0.5 V;
source or sink current
0.5
[1] 0.5
[2] 0.5
50
-
-
+4.6
V
+4.6
V
VCC + 0.5 V
- mA
±50 mA
±500
mA
VSW > 0.5 V or VSW < VCC + 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
-
±750
mA
Tstg storage temperature
Ptot total power dissipation Tamb = 40 °C to +125 °C
65
[3] -
+150
250
°C
mW
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
[3] For TSSOP5 package: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 package: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
NX3V1T66_2
Product data sheet
Rev. 02 — 24 July 2008
© NXP B.V. 2008. All rights reserved.
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NXP Semiconductors
NX3V1T66
Low-voltage analog switch
10. Recommended operating conditions
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Table 6. Recommended operating conditions
Symbol Parameter
Conditions
VCC
VI
VSW
Tamb
t/V
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
enable input E
VCC = 1.4 V to 3.6 V
Min
1.4
0
[1] 0
40
[2] -
Max
3.6
3.6
VCC
+125
200
Unit
V
V
V
°C
ns/V
[1] To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
[2] Applies to control signal levels.
11. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions
Tamb = 25 °C
Min Typ Max
VIH
VIL
II
IS(OFF)
IS(ON)
ICC
ICC
HIGH-level
input voltage
LOW-level
input voltage
input leakage
current
OFF-state
leakage
current
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
enable input E; VI = GND to 3.6 V;
VCC = 1.4 V to 3.6 V
Y port; see Figure 5;
VCC = 1.4 V to 3.6 V;
ON-state
leakage
current
Z port; see Figure 6;
VCC = 1.4 V to 3.6 V;
supply current
additional
supply current
VI = VCC or GND; VCC = 3.6 V;
VSW = GND or VCC; IO = 0 A
VSW = GND or VCC
VI = 2.6 V; VCC = 3.6 V
VI = 1.8 V; VCC = 3.6 V
VI = 1.8 V; VCC = 2.5 V
0.9 -
-
0.9 -
-
1.1 -
-
1.3 -
-
- - 0.3
- - 0.4
- - 0.4
- - 0.5
---
- - ±5
- - ±5
- - ±100
- 0.35 0.7
- 2.5 4
- 50 200
Tamb = 40 °C to +125 °C Unit
Min Max Max
(85 °C) (125 °C)
0.9 -
-V
0.9 -
-V
1.1 -
-V
1.3 -
-V
- 0.3 0.3 V
- 0.4 0.3 V
- 0.4 0.4 V
- 0.5 0.5 V
- ±0.5 ±1 µA
- ±50 ±500 nA
- ±50 ±500 nA
- 690 6000 nA
- 1 1 µA
- 5 5 µA
- 300 500 nA
NX3V1T66_2
Product data sheet
Rev. 02 — 24 July 2008
© NXP B.V. 2008. All rights reserved.
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