NTMS4939N Datasheet PDF - ON Semiconductor

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NTMS4939N
ON Semiconductor

Part Number NTMS4939N
Description Power MOSFET
Page 5 Pages


NTMS4939N datasheet pdf
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NTMS4939N
Power MOSFET
30 V, 12.5 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Points of Loads
Power Load Switch
Motor Controls
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Steady
State
Power Dissipation
(Note 1)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
10.3
8.3
1.35
V
V
A
W
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
(Note 2)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
ID
PD
8.0 A
6.4
0.8 W
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
Steady
State
TA = 25°C
TA = 70°C
ID
12.5 A
10
Power Dissipation
Steady TA = 25°C
RqJA, t v 10 s(Note 1) State
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 11 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
PD 2.0 W
IDM 100 A
TTsJtg,
55 to °C
150
IS 2.0 A
EAS 60.5 mJ
TL 260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – t v 10 s (Note 1)
RqJA
RqJA
92.7 °C/W
61.7
JunctiontoFoot (Drain)
RqJF
23.5
JunctiontoAmbient – Steady State (Note 2)
RqJA 155.6
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 0
1
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V(BR)DSS
30 V
RDS(ON) MAX
8.4 mW @ 10 V
11 mW @ 4.5 V
ID MAX
12.5 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4939N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4939NR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4939N/D



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NTMS4939N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V, VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V, ID = 7.5 A
VGS = 4.5 V, ID = 6.5 A
VDS = 1.5 V, ID = 7.5 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 15 V, ID = 7.5 A
VGS = 10 V, VDS = 15 V, ID = 7.5 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = 2.0 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.0 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.0
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Typ Max Unit
V
13.8 mV/°C
1.0
10
±100
mA
nA
2.5 V
5.0 mV/°C
7.0 8.4 mW
9.0 11
23.8 S
2000
620
16
12.4
3.3
5.3
1.85
25
pF
nC
nC
10.6 ns
3.1
36.7
21.5
0.73 1.0 V
0.57
36.3 ns
17.8
18.5
32 nC
0.66 nH
0.2
1.5
0.4 1.0 W
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NTMS4939N
TYPICAL PERFORMANCE CURVES
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24
10V/4.5 V
20
3.8 V
3.4 V
3V
16
TJ = 25°C
2.8 V
12 2.6 V
8
4 2.4 V
2.2 V
00 1.0 2.0 3.0 4.0 5.0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
45
40 VDS 10 V
35
30
25
20
15
10 TJ = 125°C
5 TJ = 25°C
0 TJ = 55°C
01 234
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
5
0.025
0.020
0.015
0.010
TJ = 25°C
ID = 7.5 A
0.012
0.010
TJ = 25°C
0.008
0.006
0.004
VGS = 4.5 V
VGS = 10 V
0.0002
34567 89
VGS, GATETOSOURCE VOLTAGE (VOLTS)
10
Figure 3. OnResistance vs. GatetoSource
Voltage
0.002
4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.8
ID = 7.5 A
1.6 VGS = 10 V
10000
VGS = 0 V
1.4 TJ = 150°C
1.2 1000
1.0 TJ = 125°C
0.8
0.6
50
25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
100 5
10 15 20 25 30
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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2400
2000
1600
1200
800
400
0
0
NTMS4939N
TYPICAL PERFORMANCE CURVES
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Ciss
Coss
TJ = 25°C
VGS = 0 V
Crss
5 10 15 20 25
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
10
9 QT
8
7 VGS
6
5
4 QGS QGD
3
2 VGS = 10 V
1
0
ID = 7.5 A
TJ = 25°C
0
5
10 15
20 25
QG, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and
DrainToSource Voltage vs. Total Charge
1000
100
VDD = 15 V
ID = 1 A
VGS = 10 V
10 td(on)
td(off)
tf
tr
2
VGS = 0 V
TJ = 25°C
1.5
1
0.5
11 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
100
10 ms
10
100 ms
1 VGS = 20 V
SINGLE PULSE
TC = 25°C
0.1 RDS(on) LIMIT
THERMAL LIMIT
1 ms
10 ms
dc
0.01
0.01
PACKAGE LIMIT
0.1 1
10 100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.4 0.5 0.6 0.7
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.8
Figure 10. Diode Forward Voltage vs. Current
70
60 ID = 11 A
50
40
30
20
10
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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