NTMS4920N Datasheet PDF - ON Semiconductor

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NTMS4920N
ON Semiconductor

Part Number NTMS4920N
Description Power MOSFET
Page 5 Pages


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NTMS4920N
Power MOSFET
30 V, 17 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Points of Loads
Power Load Switch
Motor Controls
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Steady
State
Power Dissipation RqJA
(Note 1)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
14.1
11.3
1.46
V
V
A
W
Continuous Drain
Current RqJA (Note 2)
Power Dissipation RqJA
(Note 2)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
ID
PD
10.6 A
8.5
0.82 W
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
Steady
State
TA = 25°C
TA = 70°C
ID
17 A
13.6
Power Dissipation
Steady TA = 25°C
RqJA, t v 10 s(Note 1) State
PD
2.12 W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
136 A
Operating Junction and Storage Temperature
TJ, 55 to °C
Tstg 150
Source Current (Body Diode)
IS 2.1 A
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 18 Apk, L = 1.0 mH, RG = 25 W)
EAS
162 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – t v 10 s (Note 1)
RqJA
RqJA
85.5 °C/W
59
JunctiontoFoot (Drain)
RqJF
25
JunctiontoAmbient – Steady State (Note 2)
RqJA
152
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 1
1
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V(BR)DSS
30 V
RDS(ON) MAX
4.3 mW @ 10 V
5.7 mW @ 4.5 V
ID MAX
17 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4920N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4920NR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4920N/D



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NTMS4920N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V, VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V, ID = 7.5 A
VGS = 4.5 V, ID = 6.5 A
VDS = 1.5 V, ID = 7.5 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 15 V, ID = 7.5 A
VGS = 10 V, VDS = 15 V, ID = 7.5 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = 2.0 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.0 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
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Typ Max Unit
V
12.2 mV/°C
1.0
10
±100
mA
nA
3.0 V
5.4 mV/°C
3.6 4.3 mW
4.6 5.7
30.8 S
4068
1170
41
26.3
6.4
10.4
3.8
58.9
pF
nC
nC
15.3 ns
4.7
68.6
42.2
0.7 1.0 V
0.53
50.3 ns
25.7
24.6
65 nC
0.66 nH
0.2
1.5
0.4 1.0 W
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NTMS4920N
TYPICAL PERFORMANCE CURVES
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34
32 10V
30
28
26
4.5 V
3.6 V
TJ = 25°C
2.8 V
24 3.2 V
22
20
3V
18 2.6 V
16
14
12
10
8
2.4 V
6
4
2
2 V 2.2 V
0
0 0.5 1.0 1.5 2.0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
65
60 VDS 10 V
55
50
45
40
35
30
25
20 TJ = 125°C
15
10 TJ = 25°C
5 TJ = 55°C
01 1.5 2 2.5 3
3.5
4
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4.5
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000 2
TJ = 25°C
ID = 7.5 A
468
VGS, GATETOSOURCE VOLTAGE (VOLTS)
10
Figure 3. OnResistance vs. GatetoSource
Voltage
0.006
TJ = 25°C
0.005
VGS = 4.5 V
0.004
0.003
VGS = 10 V
0.0025
7.5 10 12.5 15 17.5 20 22.5 25 27.5 30
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.8
VGS = 10 V
1.6 ID = 7.5 A
10000
VGS = 0 V
1.4
1.2
1000
TJ = 125°C
1.0
0.8
0.650
25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
TJ = 100°C
1005
10 15 20 25 30
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
NTMS4920N
TYPICAL PERFORMANCE CURVES
10
TJ = 25°C
VGS = 0 V
Ciss 8
6
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QT
VDS
Coss
Crss
5 10 15 20 25
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
4 QGS QGD
2 VGS = 10 V
ID = 7.5 A
0 TJ = 25°C
0 10 20 30 40 50 60
QG, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and
DrainToSource Voltage vs. Total Charge
1000
100
VDS = 15 V
ID = 1 A
VGS = 10 V
10
td(off)
tf
td(on)
tr
2
VGS = 0 V
TJ = 25°C
1.5
1
0.5
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0
0.5 0.55 0.6 0.65 0.7 0.75
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.8
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
10 100 ms
1 ms
1
SINGLE PULSE
TC = 25°C
0.1 RDS(on) LIMIT
THERMAL LIMIT
10 ms
dc
0.01
0.01
PACKAGE LIMIT
0.1 1
10 100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
175
150 ID = 18 A
125
100
75
50
25
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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