NTMS4840N Datasheet PDF - ON Semiconductor

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NTMS4840N
ON Semiconductor

Part Number NTMS4840N
Description Power MOSFET
Page 5 Pages


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NTMS4840N
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Power MOSFET
30 V, 7.5 A, Single NChannel, SOIC8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
SOIC8 Surface Mount Package Saves Board Space
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJA t < 10 s
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
VDSS
VGS
ID
PD
ID
PD
ID
30
±20
5.5
4.4
1.14
4.5
3.5
0.68
7.5
6.0
Unit
V
V
A
W
A
W
A
Power Dissipation
RqJA t < 10 s (Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 7.5 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
THERMAL RESISTANCE RATINGS
PD
IDM
TJ, TSTG
IS
EAS
TL
1.95
38
55 to
+150
2.0
28
260
W
A
°C
A
mJ
°C
Rating
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
110
JunctiontoAmbient – t10 s (Note 1)
JunctiontoFOOT (Drain)
RqJA
RqJF
64
40
°C/W
JunctiontoAmbient – Steady State (Note 2)
RqJA
183.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 1
1
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V(BR)DSS
30 V
RDS(on) Max
24 mW @ 10 V
36 mW @ 4.5 V
ID Max
7.5 A
NChannel
D
G
1
SO8
CASE 751
STYLE 12
S
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
S4840 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NTMS4840NR2G SOIC8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4840N/D



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NTMS4840N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)jk
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage Tem-
perature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 100°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coeffi-
cient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V
ID = 6.9 A
VGS = 4.5 V
ID = 5.0 A
VDS = 1.5 V, ID = 6.9 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 6.9 A
VGS = 10 V, VDS = 15 V, ID = 6.9 A
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINTOSOURCE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDD = 15 V,
ID = 1.0 A, RG = 3.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
PACKAGE PARASITIC VALUES
VSD
tRR
Ta
Tb
QRR
VIDG=S
=0
2.0
V
A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.0 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
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Typ Max Unit
V
18 mV/°C
1.0
10
±100
mA
nA
3.0 V
6.0 mV/°C
16 24
26 36 mW
15 S
520
140 pF
70
4.8
1.1
2.1 nC
1.9
9.5 nC
7.6
5.0
17 ns
3.0
0.77 1.0
0.58
12.5
7.3
5.2
6.0
V
ns
nC
0.66
0.20
1.50
2.0 3.0
nH
nH
nH
W
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NTMS4840N
TYPICAL PERFORMANCE CURVES
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12
10V
10
4.5 V
4.2 V
4V
8 3.8 V
TJ = 25°C
3.4 V
6
3.2 V
4
3.0 V
2
2.8 V
00
2.6 V
1.0 2.0 3.0 4.0 5.0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
32
28 VDS 10 V
24
20
16
12
8 TJ = 125°C
4 TJ = 25°C
TJ = 55°C
01.5 2 2.5 3 3.5 4 4.5
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.060
0.055
0.050
TJ = 25°C
ID = 6.9 A
0.045
0.040
0.035
0.030
0.025
0.020
0.0153
4567
89
VGS, GATETOSOURCE VOLTAGE (VOLTS)
10
Figure 3. OnResistance vs. GatetoSource
Voltage
0.030
0.028
TJ = 25°C
0.026
0.024
VGS = 4.5 V
0.022
0.020
0.018
0.016
VGS = 10 V
0.0142
3.5 5 6.5 8 9.5 11 12.5 14
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.65
1.55
1.45
ID = 7.5 A
VGS = 10 V
1.35
1.25
1.15
1.05
0.95
0.85
0.75
0.65
50
25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
100000
10000
1000
150 100 5
VGS = 0 V
TJ = 150°C
TJ = 125°C
10 15 20 25 30
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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NTMS4840N
TYPICAL PERFORMANCE CURVES
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700
TJ = 25°C
600 Ciss VGS = 0 V
500
400
300
200
100
0
0
Coss
Crss
5 10 15 20 25
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
10
9 QT
8 VDS
7
6
VGS
5
4 QGS
QGD
3
2
1
0
0123
45
VGS = 10 V
ID = 6.9 A
TJ = 25°C
6 7 8 9 10
QG, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and
DrainToSource Voltage vs. Total Charge
100
VDD = 15 V
ID = 1 A
VGS = 10 V
10
td(on)
tr
td(off)
tf
11 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
2.5
VGS = 0 V
2 TJ = 25°C
1.5
1
0.5
0
0.4 0.5 0.6 0.7
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.8
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
10 100 ms
1 ms
1
0.1
0.01
0.01
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1 1
10 ms
dc
10 100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
30
ID = 7.5 A
25
20
15
10
5
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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