NTMS4404N Datasheet PDF - ON Semiconductor

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NTMS4404N
ON Semiconductor

Part Number NTMS4404N
Description Power MOSFET
Page 6 Pages


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NTMS4404N
Power MOSFET
30 V, 12 A, Single N−Channel, SO−8
Features
High Density Power MOSFET with Ultra Low RDS(on) for Higher
Efficiency
Miniature SO−8 Surface Mount Package Saving Board Space
IDSS Specified at Elevated Temperature
Diode Exhibits High Speed, Soft Recovery
Applications
Power Management for Battery Power Products
Portable Products
Computers, Printers, PCMCIA Cards
Cell Phones, Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
tp v10 s
TA = 25°C
TA = 70°C
TA = 25°C
Steady State
tp v10 s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
30
$20
9.6
7.6
12
1.56
2.5
7.0
5.6
0.83
V
V
A
W
A
W
Pulsed Drain Current tp = 10 ms, DC = 2 %
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 20 V, VGS = 5 V, IPK = 7.25 A,
L = 19 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
EAS
TL
50
−55 to
150
6.0
500
A
°C
A
mJ
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
80 °C/W
Junction−to−Ambient – t = 1 0 s (Note 1)
RqJA
50
Junction−to−Ambient – Steady State (Note 2)
RqJA
150
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)
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V(BR)DSS
30 V
RDS(on) TYP
9.7 mW @ 10 V
15.5 mW @ 4.5 V
ID MAX
12 A
N−Channel
D
G
S
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Gate
Drain
Drain
Top View
E4404N = Device Code
L = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMS4404NR2 SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 1
1
Publication Order Number:
NTMS4404N/D



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NTMS4404N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
TJ = 25°C
VGS = 0 V, VDS = 30 V TJ = 100°C
VDS = 0 V, VGS = $20 V
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
VGS(TH)/TJ
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 6.0 A
VDS = 15 V, ID = 12 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1 MHz, VDS = 24 V
VGS = 10 V, VDS = 24 V, ID = 12 A
VGS = 10 V, VDS = 24 V, ID = 12 A,
RG = 2.5 W
VGS = 4.5 V, VDS = 24 V, ID = 6.0 A,
RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD TJ = 25°C
VGS = 0 V, IS = 6.0 A TJ = 125°C
tRR
ta VGS = 0 V, dISD/dt = 100 A/ms,
tb IS = 6.0 A
Reverse Recovery Charge
QRR
NOTES:
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.0
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Typ Max Units
V
25 mV/°C
1.0
5.0
$100
mA
nA
2.2 3.0
V
−5.0 mV/°C
9.7 11.5 mW
15.5 17.5
17.5 S
1975
575
180
50
2.4
7.5
16
2500
750
300
70
pF
nC
15 25 ns
25 50
35 55
15 30
20 ns
80
25
15
0.80 1.1
0.65
40 55
23
17
0.05
V
ns
mC
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NTMS4404N
TYPICAL PERFORMANCE CURVES
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24
VGS = 10 V to 4.2 V
20
16
4V
3.8 V
TJ = 25°C
24
VDS 10 V
20
16
12
3.6 V
8
3.4 V
4
3.2 V
3.0 V
0
0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
12
TJ = 25°C
8
4 TJ = 100°C
TJ = −55°C
0
23 456
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.05
0.04
0.03
0.02
ID = 12 A
TJ = 25°C
0.025
0.02
TJ = 25°C
0.015
0.01
VGS = 4.5 V
VGS = 10 V
0.01 0.005
0
23 45 6 78 9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0
6 8 10 12 14 16 18 20 22 24
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
ID = 12 A
VGS = 10 V
1.4
1.2
10000
VGS = 0 V
1000
TJ = 150°C
1
100
0.8 TJ = 100°C
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
10
5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMS4404N
TYPICAL PERFORMANCE CURVES
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5000
VDS = 0 V VGS = 0 V
4000 Ciss
3000 Crss
2000
TJ = 25°C
15
VDS
10
Ciss
5 QGS
QGD
QT
30
20
VGS
10
1000
0
10 5 0 5
VGS VDS
Coss
Crss
0
10 15 20 25 30
0
ID = 12 A
TJ = 25°C
10 20 30 40
QG, TOTAL GATE CHARGE (nC)
0
50
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
1000
100
VDD = 24 V
ID = 12 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
12
10
VGS = 0 V
TJ = 25°C
8
6
4
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
2
0
0.5 0.6 0.7 0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.9
Figure 10. Diode Forward Voltage vs. Current
100
10 ms 1 ms 100 ms
10
dc
1 VGS = 10 V
SINGLE PULSE
TC = 25°C
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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