NTF3055L175 Datasheet PDF - ON Semiconductor

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NTF3055L175
ON Semiconductor

Part Number NTF3055L175
Description Power MOSFET 2 Amp
Page 6 Pages


NTF3055L175 datasheet pdf
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( DataSheet : www.DataSheet4U.com )
NTF3055L175
Preferred Device
Power MOSFET
2.0 A, 60 V, Logic Level
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
60
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp 10 ms)
VGS ± 15
± 20
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tp 10 ms)
ID 2.0
ID 1.2
IDM 6.0
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
PD 2.1
1.3
0.014
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg − 55
to 175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 3.6 A, L = 10 mH, VDS = 60 Vdc)
EAS 65 mJ
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJA
RqJA
°C/W
72.3
114
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260 °C
1. When surface mounted to an FR4 board using 1pad size, 1 oz. (Cu. Area
0.995 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 in2).
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2.0 A, 60 V
RDS(on) = 175 mW
N−Channel
D
G
S
1
2
3
4
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
5L175 = Device Code
L = Location Code
WW = Work Week
5L175
LWW
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
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www.D©aSteamSichoenedut4ctUor.Ccoommponents Industries, LLC, 2004
February, 2004 − Rev. 2
1
Publication Order Number:
NTF3055L175/D



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NTF3055L175
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 1.0 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 2.0 Adc)
(VGS = 5.0 Vdc, ID = 1.0 Adc, TJ = 150°C)
Forward Transconductance (Note 3)
(VDS = 8.0 Vdc, ID = 1.5 Adc)
RDS(on)
VDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 3)
Gate Charge
(VDS = 48 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3)
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
QRR
Min Typ Max Unit
60 72.8
− 74.4
Vdc
− mV/°C
mAdc
− − 1.0
− − 10
± 100
nAdc
Vdc
1.0 1.7 2.0
− 4.2 − mV/°C
mW
− 155 175
Vdc
− 0.32 0.42
0.57 −
− 3.2 − Mhos
194 270
pF
− 70 100
− 29 40
− 10.2 20
ns
− 21 40
− 14.3 30
− 15.3 30
− 5.1 10 nC
− 1.4 −
− 2.5 −
Vdc
− 0.84 1.0
− 0.68 −
− 28.3 −
ns
− 15.6 −
− 12.7 −
− 0.027 −
mC
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NTF3055L175
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
VGS = 3.5 V
VGS = 4 V
VGS = 3 V
VGS = 5 V
VGS = 2.5 V
0.4 0.8 1.2 1.6 2.0 2.4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
2.8
3.2
VDS 10 V
2.8
2.4
2
1.6
1.2
0.8
0.4
0
1
TJ = 100°C
TJ = 25°C
TJ = −55°C
1.4 1.8 2.2 2.6 3 3.4 3.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4.2
0.28
0.24
VGS = 5 V
TJ = 100°C
0.2
TJ = 25°C
0.16
0.12
0.08
TJ = −55°C
0.04
0
0 0.5 1 1.5 2 2.5 3 3.5
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
4
0.28
0.24
VGS = 10 V
0.2
0.16
0.12
TJ = 25°C
0.08
0.04
0
0 0.5 1 1.5 2 2.5 3 3.5 4
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 1 A
1.8 VGS = 5 V
1000
VGS = 0 V
TJ = 150°C
1.6
100 TJ = 125°C
1.4
1.2
1 10 TJ = 100°C
0.8
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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NTF3055L175
700
VDS = 0 V
600
Ciss
500
VGS = 0 V
TJ = 25°C
400 Crss
300
Ciss
200
Coss
100 Crss
0
10
5 VGS 0 VDS 5 10 15 20 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
100
VDS = 30 V
ID = 2 A
VGS = 5 V
7
6
5
4 Q1
3
QT
Q2
VGS
2
1 ID = 2 A
TJ = 25°C
0
0 1 2 34 5 6
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
2
VGS = 0 V
1.6 TJ = 25°C
tr tf
10 td(on)
td(off)
1.2
0.8
0.4
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
VGS = 15 V
SINGLE PULSE
10 TC = 25°C
1
10 ms 1 ms 100 ms
10 ms
0.1
0.01
0.001
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
70
ID = 6 A
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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