NP180N055TUK Datasheet PDF - Renesas

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NP180N055TUK
Renesas

Part Number NP180N055TUK
Description MOS FIELD EFFECT TRANSISTOR
Page 8 Pages


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Preliminary Data Sheet
NP180N055TUK
MOS FIELD EFFECT TRANSISTOR
R07DS0593EJ0100
Rev.1.00
Dec 12, 2011
Description
The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 1.40 mMAX. (VGS = 10 V, ID = 90 A)
Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP180N055TUK-E1-AY *1
NP180N055TUK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-263-7pin
(MP-25ZT)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 0 V
Ratings
55
20
180
720
348
1.8
175
–55 to 175
66
435
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.43 °C/W
83.3 °C/W
R07DS0593EJ0100 Rev.1.00
Dec 12, 2011
Page 1 of 6



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NP180N055TUK
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance *1
Drain to Source On-state Resistance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage *1
Reverse Recovery Time
Reverse Recovery Charge
Note: *1 Pulsed test
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
2.0
75
TYP.
3.0
150
1.15
10700
1200
380
38
20
140
14
196
51
45
0.9
83
145
MAX.
1
100
4.0
1.40
16050
1800
690
90
50
280
40
294
1.5
Unit
A
nA
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 55 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 A
VDS = 5 V, ID = 90 A
VGS = 10 V, ID = 90 A
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDD = 28 V, ID = 90 A
VGS = 10 V
RG = 0
VDD = 44 V
VGS = 10 V
ID = 180 A
IF = 180 A, VGS = 0 V
IF = 180 A, VGS = 0 V
di/dt = 100 A/s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VGS
VGS
Wave Form
10%
0
VDD
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
R07DS0593EJ0100 Rev.1.00
Dec 12, 2011
Page 2 of 6



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NP180N055TUK
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
400
350
300
250
200
150
100
50
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(ON) Limited
(VGS=10 V)
ID(Pulse) = 720 A
100
ID(DC) = 180 A
PW = 100 μs
Power Dissipation Limited
10
Secondary Breakdown Limited
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 83.3°C/W
10
1 Rth(ch-C) = 0.43°C/W
0.1
0.01
0.1 m 1 m 10 m 100 m
1
10
PW - Pulse Width - s
Single pulse
100 1000
R07DS0593EJ0100 Rev.1.00
Dec 12, 2011
Page 3 of 6



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NP180N055TUK
800
700
600
500
400
300
200
100
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.2 0.4 0.6 0.8 1.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
VDS = VGS
ID = 250 μA
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
3
2
1
VGS = 10 V
Pulsed
0
1 10 100 1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
TA = –55°C
25°C
85°C
150°C
175°C
0.1
0.01
0.001
0
VDS = 10 V
Pulsed
123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
100
TA = –55°C
25°C
85°C
150°C
175°C
10
VDS = 5 V
Pulsed
1
1 10 100 1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
3
2
1
ID = 90 A
Pulsed
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
R07DS0593EJ0100 Rev.1.00
Dec 12, 2011
Page 4 of 6



NP180N055TUK datasheet pdf
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NP180N055TUK MOS FIELD EFFECT TRANSISTOR NP180N055TUK
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