MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Pure Sn (Tin)
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in the external electrode).
TO-263-7pin (MP-25ZT) typ. 1.5 g
• Super low on-state resistance
RDS(on) = 1.35 mΩ TYP. / 1.8 mΩ MAX. (VGS = 10 V, ID = 80 A)
• High Current Rating
ID(DC) = ±160 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
−55 to +175
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch = 150°C, VDD = 25 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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Document No. D19411EJ1V0DS00 (1st edition)
Date Published August 2008 NS
Printed in Japan