NP161N04TUG Datasheet PDF - Renesas

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NP161N04TUG
Renesas

Part Number NP161N04TUG
Description N-CHANNEL POWER MOS FET
Page 8 Pages


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP161N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP161N04TUG-E1-AY Note
NP161N04TUG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
TO-263-7pin (MP-25ZT) typ. 1.5 g
FEATURES
Super low on-state resistance
RDS(on) = 1.35 mΩ TYP. / 1.8 mΩ MAX. (VGS = 10 V, ID = 80 A)
High Current Rating
ID(DC) = ±160 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±160
±640
250
1.8
175
55 to +175
70
650
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch = 150°C, VDD = 25 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.6
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19411EJ1V0DS00 (1st edition)
Date Published August 2008 NS
Printed in Japan
2008



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NP161N04TUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 40 A
VGS = 10 V, ID = 80 A
Input Capacitance
Ciss VDS = 25 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 80 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 32 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 160 A
IF = 160 A, VGS = 0 V
Reverse Recovery Time
trr IF = 160 A, VGS = 0 V,
Reverse Recovery Charge
Note Pulsed test
Qrr di/dt = 100 A/μs
MIN.
2.0
35
TYP. MAX.
1
±100
3.0 4.0
88
1.35 1.8
13500 20250
1200 1800
750 1350
50 110
40 100
110 220
20 40
230 345
50
75
0.9 1.5
60
100
UNIT
μA
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D19411EJ1V0DS



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NP161N04TUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10000
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1000
100
10
1
0.1
RDS(on)
(VGS
=Li1mi 0itVed)
ID(pulse)
PW = 1i 00 μs
ID(DC)
Po
wer
DC
Dissip
at
i
Secondary
on Limited
B
r
1i 0
1i
msi
msi
akedown Limit
ed
TC = 25°C
Single Pulse
0.1 1 10
VDS - Drain to Source Voltage - V
100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 83.3°C/Wi
10
1 Rth(ch-C) = 0.6°C/Wi
0.1
0.01
100 μ
Single Pulse
1m
10 m
100 m
1
10
PW - Pulse Width - s
100 1000
Data Sheet D19411EJ1V0DS
3



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NP161N04TUG
700
600
500
400
300
200
100
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.5 1 1.5
VDS - Drain to Source Voltage - V
2
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
5
4
3
2
1
0
-75
VDS = VGS
ID = 250 μA
-25 25 75 125 175
Tch - Channel Temperature - °C
225
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
3
VGS = 10 V
2.5 Pulsed
2
1.5
1
0.5
0
1 10 100 1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
Tch = 55°C
10 25°C
25°C
1 75°C
125°C
0.1
150°C
175°C
0.01
VDS = 10 V
Pulsed
0.001
0123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
Tch = 55°C
100
25°C
25°C
10
1
0.1
0.1
75°C
125°C
150°C
175°C
VDS = 5 V
Pulsed
1 10 100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
ID = 80 A
5 Pulsed
4
3
2
1
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
4 Data Sheet D19411EJ1V0DS



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NP161N04TUG N-CHANNEL POWER MOS FET NP161N04TUG
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