NILMS4501N Datasheet PDF - ON Semiconductor

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NILMS4501N
ON Semiconductor

Part Number NILMS4501N
Description Power MOSFET
Page 10 Pages


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NILMS4501N
Power MOSFET with
Current Mirror FET
24 V, 9.5 A, N−Channel, ESD Protected,
1:250 Current Mirror, SO−8 Leadless
N−Channel MOSFET with 1:250 current mirror device utilizing the
latest ON Semiconductor technology to achieve low figure of merit
while keeping a high accuracy in the linear region. This device takes
advantage of the latest leadless QFN package to improve thermal
transfer.
Features
Current Sense MOSFET
"15% Current Mirror Accuracy
ESD Protected on the Main and the Mirror MOSFET
Low Gate Charge
Applications
DC−DC Converters
Voltage Regulator Modules
Small DC Motor Controls
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VDSS
24 V
RDS(on) Typ
12 mW @ 4.5 V
ID MAX
9.5 A
N−Channel with Current
Mirror FET
Drain
Gate
Main
Sense
Source
MARKING
DIAGRAM
DataShee
SO−8 LL
CASE 508AA
xxxxx
AYWW
xxxxx
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
PIN CONNECTIONS
Sense (1)
Drain (4)
Source (2)
Gate (3)
(Bottom View)
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© Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 2
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ORDERING INFORMATION
Device
Package
Shipping
NILMS4501NR2 SO−8 LL 2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NILMS4501N/D



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NILMS4501N
MAIN MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Pulsed (tpv10 s)
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Thermal Resistance
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Junction−to−Ambient (tpv10 s) (Note 3)
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche (VDD = 24 V, VGS = 10 V,
IL = 9.5 A, L = 1.0 mH, RG = 25 W)
Electrostatic Discharge Capability
Human Body Model
Charged Device Model
VDSS
VGS
ID
ID
IDM
PD
PD
RqJA
RqJA
RqJA
TJ, TSTG
EAS
ESDHBM
CMD
24
"10
9.5
6.7
14
2.7
1.4
55
110
25
−55 to 175
50
4000
2000
V
V
Adc
Adc
Apk
W
°C/W
°C
mJ
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0821 in sq).
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) and 200 LFM airflow.
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MAIN MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
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Drain−to−Source Breakdown Voltage
(VGS = 0 V, ID = 250 mA)
Temperature Coefficient (Positive)
V(BR)DSS
24
29
23
−V
− mV/°C
Zero Gate Voltage Drain Current
(VDS = 24 V, VGS = 0 V)
(VDS = 24 V, VGS = 0 V, TJ = 125°C)
(VDS = 24 V, VGS = 0 V, TJ = 175°C)
Gate−Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 9.0 V, VDS = 0 V)
ON CHARACTERISTICS
IDSS
IGSS
mA
− 0.05 1.0
− 1.0 100
− 30 100
− 40 100 nA
− 1.3 10 mA
Gate Threshold Voltage
(VDS = VGS, ID = 250 mA)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 V, ID = 6.0 A, TJ @ 25°C)
(VGS = 10 V, ID = 6.0 A, TJ @ 125°C)
(VGS = 10 V, ID = 6.0 A, TJ @ 175°C)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 4.5 V, ID = 6.0 A, TJ @ 25°C)
(VGS = 4.5 V, ID = 6.0 A, TJ @ 125°C)
(VGS = 4.5 V, ID = 6.0 A, TJ @ 175°C)
Main/Mirror MOSFET Current Ratio VGS = 4.5 V, ID = 1.0 A
VGS = 4.5 V, ID = 1.0 A, TA = 175°C
Forward Transconductance (Note 4) VDS = 6.0 V, ID = 6.0 A
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
VGS(th)
RDS(on)
RDS(on)
IRAT
gFS
1.1
212
15
1.60
−5.0
9.0
12
14
12
16
18
250
268
23
2.0 V
− mV/°C
mW
13
17
20
mW
16
20
24
287 −
− Mhos
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NILMS4501N
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MAIN MOSFET ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 6.0 V, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 6)
Ciss
Coss
Crss
− 1380
− 870
− 275
Turn−On Delay Time
td(on) − 12
Rise Time
Turn−Off Delay Time
(VDD = 6.0 V, ID = 2.0 A,
VGS = 4.5 V, RG = 2.5 W)
tr − 15
td(off) − 17
Fall Time
tf − 6.0
Turn−On Delay Time
td(on) − 8.5
Rise Time
Turn−Off Delay Time
(VDD = 6.0 V, ID = 2.0 A,
VGS = 10 V, RG = 2.5 W)
tr
td(off)
− 15
− 22.5
Fall Time
tf − 6.5
Gate Charge
QT − 11
(VDS = 6.0 V, ID = 2.0 A,
VGS = 4.5 V)
QG(th) − 1.7
Qgs − 3.5
Qgd − 3.6
Gate Charge
QT − 23.5
(VDS = 6.0 V, ID = 2.0 A,
QG(th) − 4.4
VGS = 10 V)
Qgs − 5.6
DataSheet4U.com Qgd
− 2.5
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Notes 5 & 6)
Reverse Recovery Time (Note 6)
Reverse Recovery Stored Charge
(Note 6)
(IS = 6.0 A, VGS = 0 V)
(IS = 6.0 A, VGS = 0 V, TJ = 175°C)
(IS = 3.0 A, VGS = 0 V,
dIS/dt = 100 A/ms)
VSD
trr
ta
tb
QRR
− 0.80
− 0.57
− 42
− 19.5
− 22.5
− 0.042
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Max
1500
1000
350
14
18
20
8.0
11
20
27
9.0
14
2.5
4.5
4.3
25
5.5
10
7.0
1.1
55
25
30
0.06
Unit
pF
ns
ns
nC
nC
V
ns
mC
DataShee
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NILMS4501N
TYPICAL ELECTRICAL CHARACTERISTICS
6
VGS = 10 V
5 4.5 V
3.0 V
4 2.8 V
3
2
2.6 V
2.4 V
1
2.2 V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
25
VGS = 10 V
4.6 V
20 4.0 V
3.6 V
3.2 V
3.0 V
15
2.8 V
10
2.6 V
5
2.4 V
2.2 V
0
0 0.5 1 1.5 2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
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20
VDS =10 V
0.024
0.022 VGS = 4.5 V
TJ = 175°C
0.020
15
0.018
0.016
TJ = 125°C
10 TJ = 125°C
0.014
0.012
TJ = 25°C
0.010
DataSheet40U.0.0c8om
5
TJ = 25°C
0.006
TJ = 175°C
0.004
TJ = − 55°C
0.002
TJ = −55°C
0
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
0
0
5 10 15 20
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. Transfer Characteristics
Figure 4. On−Resistance versus
Drain Current and Temperature
DataShee
0.018
VGS = 10 V
0.016
TJ = 175°C
0.014
0.012
TJ = 125°C
0.010
0.008
TJ = 25°C
0.006
0.004
TJ = −55°C
0.002
0
0 5 10 15 20
ID, DRAIN CURRENT (AMPS)
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Figure 5. On−Resistance versus
Drain Current and Temperature
0.03
0.025
ID = 10 A
0.02
0.015
0.01
0.005
2
TJ = 175°C
TJ = 125°C
TJ = 25°C
TJ = −55°C
35 5 6 78 9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 6. On−Resistance versus Gate Voltage
and Temperature
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