NGTB40N120FLWG Datasheet PDF - ON Semiconductor

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NGTB40N120FLWG
ON Semiconductor

Part Number NGTB40N120FLWG
Description IGBT
Page 10 Pages


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NGTB40N120FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the
device is a soft and fast copackaged free wheeling diode with a low
forward voltage.
Features
Low Saturation Voltage using NPT Trench with Field Stop
Technology
Low Switching Loss Reduces System Power Dissipation
10 ms Short Circuit Capability
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are PbFree Devices
Typical Applications
Solar Inverter
UPS Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed
by TJmax
current,
Tpulse
limited
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ 150°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TSC
TJ
1200
80
40
320
V
Ahttp://www.DataSheet4U.net/
A
A
80
40
320 A
$20
260
104
10
V
W
ms
55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.6 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N120FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB40N120FLWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
Publication Order Number:
NGTB40N120FLW/D
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NGTB40N120FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.48
1.5
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 150°C
VGE = VCE, IC = 400 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 40 A, VGE = 15 V
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SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 125°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
Total switching loss
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min Typ
1200
1.50
4.5
2.0
2.2
5.5
10,000
240
180
415
80
170
130
41
385
140
2.6
1.6
4.2
130
42
400
230
3.0
2.8
5.8
Max
2.2
6.5
1.0
2
200
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
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NGTB40N120FLWG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE
=V0GVE,
=IF0=V4,0IFA=,
40 A
TJ = 150°C
TJ = 25°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 125°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
Symbol Min Typ Max Unit
VF
2.7 3.5 V
3.5
trr
200
ns
Qrr 1.5 mc
Irrm
15
A
trr
260
ns
Qrr 2.0 mc
Irrm
22
A
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NGTB40N120FLWG
TYPICAL CHARACTERISTICS
400
350 TJ = 25°C
300
VGE = 20 to 13 V
250
200 11 V
150
100
50
0
0
10 V
9V
8V
7V
12 3 456 7
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
8
300
TJ = 150°C
250
VGE = 20 to 13 V
200
150
100
50
0
0
11 V
10 V
9V
8V
7V
12 3 456
7
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
8
300
TJ = 40°C
250
200
VGE = 20 to 13 V
11 V
150
100
50
0
0
10 V
9V
7V
8V
12 3 456 7
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
8
250
200
150
100
50
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0
0
TJ = 150°C
TJ = 25°C
4 8 12
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
16
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
IC = 80 A
IC = 40 A
IC = 10 A
IC = 5 A
20 10 40 70 100 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
100000
10000
Cies
1000
Coes
100
Cres
10
160 0 20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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