NGTB30N120LWG Datasheet PDF - ON Semiconductor

www.Datasheet-PDF.com

NGTB30N120LWG
ON Semiconductor

Part Number NGTB30N120LWG
Description IGBT
Page 9 Pages


NGTB30N120LWG datasheet pdf
Download PDF
NGTB30N120LWG pdf
View PDF for Mobile

No Preview Available !

NGTB30N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low onstate voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged copackaged free wheeling diode with a
low forward voltage.
Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Inverter Welding Machines
Microwave Ovens
Industrial Switching
Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
60
30
V
http://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 240 A
IF A
60
30
Diode pulsed
by TJmax
current,
Tpulse
limited
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
240
$20
260
104
A
V
W
ShortCircuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ 150°C
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tsc
TJ
Tstg
TSLD
5
55 to +150
55 to +150
260
ms
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 1.75 V
Eoff = 1.0 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N120L
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB30N120LWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
Publication Order Number:
NGTB30N120L/D
datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

NGTB30N120LWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.48
1.5
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 150°C
VGE = VCE, IC = 400 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 30 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
http://www.DataSheet4U.net/
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
TJ = 125°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn-off switching loss
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
VF
Min Typ
1200
1.35
4.5
1.75
2.1
5.5
10,400
245
185
420
94
178
136
36
360
150
4.4
1.0
131
36
380
216
5.3
2.0
1.5
1.7
Max
2.2
6.5
0.5
2.0
100
1.7
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
http://onsemi.com
2
datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

NGTB30N120LWG
TYPICAL CHARACTERISTICS
160
140
120
100
80
60
40
20
0
0
TJ = 25°C
VGE = 20 to 11 V
10 V
9V
8V
7V
12 3 4
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
5
140
120 TJ = 150°C
100
VGE = 20 to 13 V
10 V
80 9 V
60
40 8 V
20 7 V
0
012 3 45
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
160
140
120 TJ = 40°C
100
VGE = 20 to 11 V
10 V
80
60
40 9 V
20 7 V
8V
0
012 3 45
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
160
140
120
100
80
60
40
http://www.DataSheet4U.net/
20
0
0
TJ = 150°C
TJ = 25°C
48
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
12
3.0 100,000
IC = 60 A
2.5
2.0
IC = 30 A
10,000
Cies
1.5 IC = 10 A
1.0 IC = 5 A
0.5
0
50 20 10 40 70 100 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
160
1000
100
10
0
Coes
Cres
20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
http://onsemi.com
3
datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

NGTB30N120LWG
TYPICAL CHARACTERISTICS
140 20
120
100
TJ = 25°C
15
TJ = 150°C
80
10
60
VCE = 600 V
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
5
0
0 60 120 180 240 300 360 420 480
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
6 1000
5 Eon
td(off)
tf
4
VCE = 600 V
3
VGE = 15 V
IC = 30 A
Rg = 10 W
2
1
0
0 20 40 60
100
Eoff 10
VCE = 600 V
VGE = 15 V
http://www.DataSheet4U.net/
IC = 30 A
Rg = 10 W
1
80 100 120 140 160
0 20 40 60
td(on)
tr
80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
12
VCE = 600 V
10
VGE = 15 V
TJ = 150°C
Rg = 10 W
8
Eon
6
4 Eoff
2
0
16 24 32 40 48 56
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
100
td(off)
tf
td(on)
tr
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
64 16 24 32 40 48 56 64
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
http://onsemi.com
4
datasheet pdf - http://www.DataSheet4U.net/



NGTB30N120LWG datasheet pdf
Download PDF
NGTB30N120LWG pdf
View PDF for Mobile


Related : Start with NGTB30N120LW Part Numbers by
NGTB30N120LWG IGBT NGTB30N120LWG
ON Semiconductor
NGTB30N120LWG pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact