NGTB25N120IHLWG Datasheet PDF - ON Semiconductor

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NGTB25N120IHLWG
ON Semiconductor

Part Number NGTB25N120IHLWG
Description IGBT
Page 9 Pages


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NGTB25N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged copackaged free wheeling diode with a
low forward voltage.
Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are PbFree Devices
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
50
25
V
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A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
50
25
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
200
$20
192
77
A
V
W
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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25 A, 1200 V
VCEsat = 1.85 V
Eoff = 0.8 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
25N120IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB25N120IHLWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1
Publication Order Number:
NGTB25N120IHLW/D
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NGTB25N120IHLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.65
2.0
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VGE = VCE, IC = 250 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 25 A, VGE = 15 V
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SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnoff delay time
Fall time
Turnoff switching loss
Turnoff delay time
Fall time
Turnoff switching loss
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 125°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 25 A
VGE = 0 V, IF = 25 A, TJ = 150°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(off)
tf
Eoff
td(off)
tf
Eoff
VF
Min
1200
4.5
Typ
1.85
2.1
5.5
4700
155
100
200
38
100
235
160
0.8
250
225
1.9
1.7
1.8
Max
2.3
6.5
0.5
2.0
100
1.8
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
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NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
120
TJ = 25°C
100
80
VGE = 20 to 13 V
11 V
10 V
60
40 9 V
20 8 V
0 7V
012 3 45
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
120
TJ = 150°C
100
VGE = 20 to 11 V
80
10 V
60
9V
40
8V
20
7V
0
012 3 45
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
120
VGE = 20 to 13 V
100
80
TJ = 40°C
60
11 V
10 V
120
100
80
60
40
20
0
0
9V
7V
8V
12 3 4
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
5
40
http://www.DataSheet4U.net/
20
0
0
TJ = 150°C
TJ = 25°C
5 10
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
15
10,000
1000
Cies
100
10
0
Coes
Cres
25 50 75 100 125 150 175
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 5. Typical Capacitance
200
120
100
TJ = 25°C
TJ = 125°C
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE (V)
Figure 6. Diode Forward Characteristics
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NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
16 2.0
14
12
400 V
200 V
600 V
1.8
VCE = 600 V
VGE = 15 V
1.6 IC = 25 A
1.4 Rg = 10 W
10 1.2
8 1.0
6 0.8
0.6
4
0.4
2 0.2
00
0 50 100 150 200 250
0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Energy Loss vs. Temperature
1000
100
td(off)
tf
3.0
VCE = 600 V
2.5
VGE = 15 V
TJ = 150°C
Rg = 10 W
2.0
1.5
10
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
1
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
160
1.0
0.5http://www.DataSheet4U.net/
0
10
14 18 22 26 30 34 38 42
IC, COLLECTOR (A)
Figure 10. Energy Loss vs. IC
1000
100
tf
td(off)
10 VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
10 14 18 22 26 30 34 38
IC, COLLECTOR (A)
Figure 11. Switching Time vs. IC
42
3.0
2.5
2.0
1.5
1.0
0.5
0
5
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 12. Energy Loss vs. Rg
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