NGTB25N120FLWG Datasheet PDF - ON Semiconductor

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NGTB25N120FLWG
ON Semiconductor

Part Number NGTB25N120FLWG
Description IGBT
Page 10 Pages


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NGTB25N120FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for UPS
and solar applications. Incorporated into the device is a soft and fast
copackaged free wheeling diode with a low forward voltage.
Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
10 ms Short Circuit Capability
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are PbFree Devices
Typical Applications
Solar Inverter
UPS Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ 150°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TSC
TJ
1200
50
25
200
V
A
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A
A
50
25
200 A
$20
192
77
10
V
W
ms
55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds(note 3)
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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25 A, 1200 V
VCEsat = 2.0 V
Eoff = 0.95 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
25N120FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB25N120FLWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
Publication Order Number:
NGTB25N120FLW/D
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NGTB25N120FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.65
1.5
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VGE = VCE, IC = 250 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 25 A, VGE = 15 V
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SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 125°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
Total switching loss
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
1200
1.55
4.5
Typ
2.0
2.2
5.5
5200
144
94
220
40
98
91
26
228
160
1.50
0.95
2.45
88
28
240
270
1.8
1.6
3.4
Max
2.2
6.5
0.5
2
100
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
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NGTB25N120FLWG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE
=V0GVE,
=IF0=V2,5IFA=,
25 A
TJ = 150°C
TJ = 25°C
IF = 25 A, VR = 400 V
diF/dt = 200 A/ms
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 125°C
IF = 25 A, VR = 400 V
diF/dt = 200 A/ms
Symbol Min Typ Max Unit
VF
2.2 2.8
2.5
V
trr 240 ns
Qrr 1.5 mc
Irrm 15 A
trr 260 ns
Qrr 2.0 mc
Irrm 19 A
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NGTB25N120FLWG
TYPICAL CHARACTERISTICS
300
TJ = 25°C
250
200 VGE = 20 to 15 V
13 V
150 11 V
100
50
0
0
10 V
9V
8V
7V
1 2 3 4 567 8
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
300
TJ = 150°C
250
200
VGE = 20 to 15 V
13 V
150
100
50
0
0
11 V
10 V
9V
8V
7V
1 2 3 4 567
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
8
300
250 TJ = 40°C VGE = 20 to 15 V
200
13 V
150
11 V
100 10 V
50 9 V 7 V
8V
0
0 1 2 3 4 5678
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
200
175
150 TJ = 25°C
125 TJ = 150°C
100
75
50
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25
00 4
8 12 16
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
10,000
1000
Cies
100
10
0
Coes
Cres
25 50 75 100 125 150 175
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 5. Typical Capacitance
200
120
100
80
TJ = 25°C
60
40 TJ = 125°C
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VF, FORWARD VOLTAGE (V)
Figure 6. Diode Forward Characteristics
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