NGTB20N120IHSWG Datasheet PDF - ON Semiconductor

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NGTB20N120IHSWG
ON Semiconductor

Part Number NGTB20N120IHSWG
Description IGBT
Page 9 Pages


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NGTB20N120IHSWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged copackaged free wheeling diode with a
low forward voltage.
Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are PbFree Devices
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
40
20
V
Ahttp://www.DataSheet4U.net/
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF A
40
20
Diode pulsed
by TJmax
current,
Tpulse
limited
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
120
$20
156
62.5
A
V
W
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.65 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
20N120IHS
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB20N120IHSWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
Publication Order Number:
NGTB20N120IHS/D
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NGTB20N120IHSWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.80
2.0
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 20 A, TJ = 150°C
VGE = VCE, IC = 50 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 20 A, VGE = 15 V
http://www.DataSheet4U.net/
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnoff delay time
Fall time
Turnoff switching loss
Turnoff delay time
Fall time
Turnoff switching loss
TJ = 25°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 125°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 20 A
VGE = 0 V, IF = 20 A, TJ = 150°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(off)
tf
Eoff
td(off)
tf
Eoff
VF
Min
1200
4.5
Typ
2.10
2.5
5.5
3600
90
65
155
30
70
160
160
0.65
167
205
1.20
1.55
1.65
Max
2.4
6.5
0.5
2.0
100
1.75
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
http://onsemi.com
2
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NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
160
TJ = 25°C
140
120
100
VGE = 20 to 13 V
11 V
80
10 V
60
40 9 V
20 8 V
0 7V
012 3 45678
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
160
TJ = 150°C
140
120
VGE = 20 to 15 V
13 V
100
80
60
40
20
0
0
11 V
10 V
9V
8V
7V
123 45678
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
160
TJ = 40°C
140
120
100
VGE = 20 to 13 V
11 V
80
10 V
60
40 9 V
20 8 V 7 V
0
012 3 45 6 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
140
120
100 TJ = 25°C TJ = 150°C
80
60
40
http://www.DataSheet4U.net/
20
0
0 4 8 12 16
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
4 10,000
IC = 40 A
Cies
3
IC = 20 A
1000
2 IC = 10 A
IC = 5 A
100
1
Coes
0
50
20 10 40 70 100 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
160
10 Cres
0 20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
http://onsemi.com
3
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NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
120
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
16
14 VCE = 600 V
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.6 1000
1.4
tf
1.2
1.0 100 td(off)
0.8
0.6
0.4
0.2
0
0
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
10
http://www.DataSheet4U.net/
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
0
20 40 60 80 100 120 140 160
0 20 40 60
80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
3.0
VCE = 600 V
2.5 VGE = 15 V
TJ = 150°C
2.0 Rg = 10 W
1.5
1.0
0.5
0
8
14 20 26 32 38
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
100
tf
td(off)
10 VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
44 8 14 20 26 32 38 44
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
http://onsemi.com
4
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