NGTB15N60EG Datasheet PDF - ON Semiconductor

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NGTB15N60EG
ON Semiconductor

Part Number NGTB15N60EG
Description IGBT
Page 10 Pages


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NGTB15N60EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective NonPunch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications. Incorporated into the device is a rugged copackaged
reverse recovery diode with a low forward voltage.
Features
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
Soft Fast Reverse Recovery Diode
10 ms Short Circuit Capability
Excellent Current versus Package Size Performance Density
This is a PbFree Device
Typical Applications
White Goods Appliance Motor Control
General Purpose Inverter
AC and DC Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol Value Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse limited by
TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited by
TJmax
Gateemitter voltage
Power dissipation
@ TC = 25°C
@ TC = 100°C
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ v +150°C
Operating junction temperature range
VCES
IC
ICM
IF
IFM
VGE
PD
tSC
TJ
600
30
15
120
30
15
120
$20
117
47
10
55 to
+150
Vhttp://www.DataSheet4U.net/
A
A
A
A
V
W
ms
°C
Storage temperature range
Tstg
55 to
+150
°C
Lead temperature for soldering, 1/8” from
TSLD
260
°C
case for 5 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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15 A, 600 V
VCEsat = 1.7 V
C
G
E
C
G CE
TO220
CASE 221A
STYLE 4
MARKING DIAGRAM
15N60G
AYWW
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB15N60EG
TO220 50 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 6
1
Publication Order Number:
NGTB15N60E/D
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NGTB15N60EG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction to case, for IGBT
Thermal resistance junction to case, for Diode
Thermal resistance junction to ambient
Symbol
RqJC
RqJC
RqJA
Value
1.06
3.76
60
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gateemitter
shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VGE = VCE , IC = 250 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
Forward Transconductance
DYNAMIC CHARACTERISTIC
VCE = 20 V, IC = 15 A
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 15 A, VGE = 15 Vhttp://www.DataSheet4U.net/
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 150°C
VCC = R40g0=V2,2ICW= 15 A
VGE = 0 V / 15 V
Total switching loss
DIODE CHARACTERISTIC
Forward voltage
VGE
=V0GVE,
=IF0=V1,5IFA=,
15 A
TJ = 150°C
Symbol Min Typ Max Unit
V(BR)CES 600
VCEsat
1.45
1.8
1.7
2.1
1.95
2.4
VGE(th) 4.5 5.5 6.5
ICES
10
200
IGES − − 100
gfs 10.1
V
V
V
mA
nA
S
Cies
Coes
Cres
Qg
Qge
Qgc
2600
64
42
80
24
33
pF
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
78
30
130
120
0.900
0.300
1.200
76
33
133
223
1.10
0.510
1.610
ns
mJ
ns
mJ
VF
1.6 1.85 V
1.6
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NGTB15N60EG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
DIODE CHARACTERISTIC
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 25°C
IF = 15 A, VR = 200 V
diF/dt = 200 A/µs
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 125°C
IF
= 15 A,
diF/dt =
V20R0=A2/µ0s0
V
Symbol Min Typ Max Unit
trr
270
ns
Qrr 350 nc
Irrm 5
A
trr
350
ns
Qrr 1000 nc
Irrm 7.5
A
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NGTB15N60EG
TYPICAL CHARACTERISTICS
60 TJ = 25°C
50 VGE = 17 V to 13 V
40
30 11 V
20
10
0
0
9V
7V
1 2 345 67
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. IGBT Output Characteristics
8
60 TJ = 150°C
50 VGE = 17 V to 15 V
40
13 V
30
20
10
0
0
11 V
9V
7V
1 2 345 678
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. IGBT Output Characteristics
9
60
TJ = 40°C
50 VGE = 17 V to 13 V
40
30
20
11 V
60
VCE = 20 V
50
40
30
20
TJ = 40°C
25°C
150°C
10
0
0
9V
7V
1 2 345 67
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. IGBT Output Characteristics
10http://www.DataSheet4U.net/
0
80
4
8 12 16
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.5 10000
VGE = 0 V,
3
IC = 30 A
f = 1 MHz
Cies
2.5
IC = 15 A
1000
2
1.5
1
IC = 10 A
0.5
IC = 5 A
060 40 20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
100
10
0
Cres
Coes
10 20 30 40 50 60 70 80 90
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
100
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