NGTB15N120LWG Datasheet PDF - ON Semiconductor

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NGTB15N120LWG
ON Semiconductor

Part Number NGTB15N120LWG
Description IGBT
Page 9 Pages


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NGTB15N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged copackaged free wheeling diode with a
low forward voltage.
Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Inverter Welding Machines
Microwave Ovens
Industrial Switching
Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
30
15
Vhttp://www.DataSheet4U.net/
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF
A
30
15
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
100
$20
156
62.5
A
V
W
ShortCircuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ 150°C
Operating junction temperature
range
Tsc
TJ
5
55 to +150
ms
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 A, 1200 V
VCEsat = 1.8 V
Eoff = 0.56 mJ
C
G
E
G
CE
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
15N120L
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB15N120LWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1
Publication Order Number:
NGTB15N120L/D
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NGTB15N120LWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.8
1.5
60
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 15 A
VGE = 15 V, IC = 15 A, TJ = 150°C
VGE = VCE, IC = 150 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 15 A, VGE = 15 V
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SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
TJ = 25°C
VCC = 600 V, IC = 15 A
Rg = 15 W
VGE = 0 V/ 15V
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
TJ = 125°C
VCC = 600 V, IC = 15 A
Rg = 15 W
VGE = 0 V/ 15V
Turn-off switching loss
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 15 A
VGE = 0 V, IF = 15 A, TJ = 150°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
VF
Min
1200
4.5
Typ
1.8
2.0
5.5
3600
88
63
160
30
73
72
19
165
200
2.1
0.56
70
21
175
260
2.7
1.0
1.4
1.5
Max
2.2
6.5
0.5
2.0
100
1.6
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
http://onsemi.com
2
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NGTB15N120LWG
TYPICAL CHARACTERISTICS
70
60
VGE = 17 to 11 V
50
10 V
TJ = 25°C
40
30 9 V
20
10 8 V
0 7V
012 3 456 7
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
8
60
VGE = 17 to 11 V
TJ = 150°C
50
10 V
40
9V
30
20 8 V
10 7 V
0
012 3 456 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
70
60 VGE = 17 to 11 V
10 V
50
TJ = 40°C
40
30
20 9 V
10 7 V
8V
0
012 3 456 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
60
50
40
TJ = 150°C TJ = 25°C
30
20
10
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0
0 5 10 15
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
10,000
1000
Cies
100
10
0
Coes
Cres
25 50 75 100 125 150 175
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 5. Typical Capacitance
200
16
14
12
10
8
6
TJ = 150°C
4
TJ = 25°C
2
0
0 0.25 0.50 0.75 1.00 1.25 1.50
VF, FORWARD VOLTAGE (V)
Figure 6. Diode Forward Characteristics
http://onsemi.com
3
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NGTB15N120LWG
TYPICAL CHARACTERISTICS
16
200 V
14
400 V
600 V
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175 200
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
3.5
3
VCE = 600 V
VGE = 15 V
2.5
IC = 15 A
Rg = 15 W
2
Eon
1.5
1 Eoff
0.5
0
0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 8. Energy Loss vs. Temperature
1000
100
td(on)
tf
td(off)
tr
6 VCE = 600 V
5
VGE = 15 V
TJ = 150°C
Rg = 15 W
4
3
Eon
10
VCE = 600 V
2 Eoff
VGE = 15 V
IC = 15 A
http://www.DataSheet4U.net/
1
1 Rg = 15 W
0
0 20 40 60 80 100 120 140 160
8 10 12 14 16 18 20 22 24 26 28 30 32
TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
IC, COLLECTOR (A)
Figure 10. Energy Loss vs. IC
1000
100
td(on)
tf
td(off)
tr
10 VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 15 W
1
8 10 12 14 16 18 20 22 24 26 28 30 32
IC, COLLECTOR (A)
Figure 11. Switching Time vs. IC
6
VCE = 600 V
5
VGE = 15 V
IC = 15 A
4 TJ = 150°C
3
2
1
0
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 12. Energy Loss vs. Rg
http://onsemi.com
4
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