NGA-386 Datasheet PDF - Stanford Microdevices


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NGA-386
Stanford Microdevices

Part Number NGA-386
Description Cascadable GaAs HBT MMIC Amplifier
Page 7 Pages

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Product Description
Stanford Microdevices’ NGA-386 is a high performance
Gallium Arsenide Heterojunction Bipolar Transistor MMIC
Amplifier. Designed with InGaP process technology for
improved reliability, a Darlington configuration is utilized for
broadband performance up to 5 Ghz. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of intermodulation
products.
PPrreelilmimininaarryy
NGA-386
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
25
20
15
dB
10
5
0
0
Small Signal Gain vs. Frequency
123456
Frequency GHz
7
Product Features
High Gain: 18.9dB at 1950Mhz
Cascadable 50 ohm: 1.2:1 VSWR
Patented GaAs HBT Technology
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, ID = 35 mA, T = 25ºC
P1dB Output Power at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
Units
dBm
dBm
dBm
Min.
Typ.
14.5
15.0
15.6
Max.
Third Order Intercept Point
IP3 Power out per tone = 0 dBm
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dBm
dBm
dBm
25.8
27.0
27.0
S21 Small Signal Gain
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dB
dB
dB
20.9
18.9
18.0
Bandwidth 3dB Bandwidth
MHz
2000
S11 Input VSWR
S22 Output VSWR
S12 Reverse Isolation
f = DC - 5000 MHz
f = DC - 5000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
-
-
dB
dB
dB
1.2:1
1.3:1
23.4
22.2
21.6
NF Noise Figure
f = 2000 MHz
dB
2.7
VD
Rth, j-l
Device Voltage
Thermal Resistance (junction - lead)
V
ºC/W
4.0
144
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
DataSheet4 U .com
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
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PPrreelilmimininaarryy
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Parameter
Supply Current
Device Voltage
Operating Temperature
Maximum Input Power
Storage Temperature Range
Operating Junction Temperature
Value
90
6.0
-40 to +85
+10
-40 to +150
+150
Unit
mA
V
ºC
dBm
ºC
ºC
Key parameters, at typical operating frequencies:
Parameter
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
Typical
25ºC
21.3
25.1
14.6
26.8
23.6
20.9
25.8
14.5
24.8
23.4
18.9
27.0
15.0
22.0
22.2
18.0
27.0
15.6
21.0
21.6
Unit
Test Condition
(ID = 35mA, unless otherwise noted)
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
DataSheet4 U .com
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101103 Rev C



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Pin #
1
2
3
4
PPrreelilmimininaarryy
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Function
Description
RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor chosen
for the frequency of operation.
GND
Connection to ground. For best
performance use via holes (as close to
ground leads as possible) to reduce lead
inductance.
RF OUT/
BIAS
RF output and bias pin. DC voltage is
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
GND Same as Pin 2.
Device Schematic
Application Schematic for Operation at 850 MHz
Recommended Bias Resistor Values
Supply
Voltage(Vs)
5V
8V
9V 12V
Rbias
(Ohms)
30 120 150 240
For 9V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
1uF 68pF
R bias
50 ohm
microstrip
100pF
2
1
3
4
33nH
100pF
50 ohm
microstrip
Vs
Application Schematic for Operation at 1950 MHz
1uF 22pF
R bias
Vs
50 ohm
microstrip
68pF
2
1
3
4
22nH
68pF
50 ohm
microstrip
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
DataSheet4 U .com
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101103 Rev C



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PPrreelilmimininaarryy
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
S-parameters over frequency, at 25ºC
25
20
15
dB
10
5
0
0
0
-5
-10
dB -15
-20
-25
-30
0
S21, ID =35mA, T=25ºC
123456
Frequency GHz
S11, ID =35mA, T=25ºC
123456
Frequency GHz
0
-5
-10
dB -15
-20
-25
-30
70
0
-5
-10
dB -15
-20
-25
-30
70
S12, ID =35mA, T=25ºC
123456
Frequency GHz
S22, ID =35mA, T=25ºC
123456
Frequency GHz
7
7
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
DataSheet4 U .com
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-101103 Rev C




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