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Part Number

NE615

Manufacturer Philips
Short Description SA615
Long Description INTEGRATED CIRCUITS SA615 High performance low power mixer FM IF system Product specification Replaces data of 1992 Nov

Datasheet : NE615



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  • NE602A Double-Balanced Mixer and Oscillator
  • NE604A High Performance Low Power FM IF System
  • NE605 HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM
  • NE612 Double-balanced mixer and oscillator
  • NE614A Low Power FM IF System
  • NE615 SA615
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  • NE649 Low Voltage Dolby Noise Reduction Circuit
  • NE650 Dolby B-Type Noise Reduction Circuit
  • NE6500379 3W L / S-BAND POWER GaAs MESFET
  • NE6500379A 3W L / S-BAND POWER GaAs MESFET
  • NE6500496 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
  • NE6500496 L&S BAND MEDIUM POWER GaAs MESFET
  • NE650103M NECS 10 W L & S-BAND POWER GaAs MESFET
  • NE6501077 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
  • NE650R279A 0.2 W L / S-BAND POWER GaAs MES FET
  • NE650R479A 0.4 W L / S-BAND POWER GaAs MES FET
  • NE6510179 1 W L-BAND POWER GaAs HJ-FET
  • NE6510179A MEDIUM POWER GaAs HJ-FET
  • NE6510179A 1 W L-BAND POWER GaAs HJ-FET
  • NE6510379A 3 W L-BAND POWER GaAs HJ-FET
  • NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET
  • NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
  • NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
  • NE66219 NPN SILICON RF TRANSISTOR
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