NCE01H14D Datasheet PDF - NCE Power Semiconductor

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NCE01H14D
NCE Power Semiconductor

Part Number NCE01H14D
Description NCE N-Channel Enhancement Mode Power MOSFET
Page 7 Pages


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Pb Free Product
NCE01H14D
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H14D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =100V,ID =140A
RDS(ON) < 5.5m@ VGS=10V
(Typ:4.9m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01H14D
NCE01H14D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
140
97
550
330
2.2
1200
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE01H14D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.45 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
100 110
--
--
-
1
±100
V
μA
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=10V,ID=40A
2 3.2
- 4.9
170 -
4
5.5
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 10500
- 914
-
-
PF
PF
Crss
- 695
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=65V,ID=40A
VGS=10V,RGEN=2.5
VDS=44V,ID=40A,
VGS=10V
- 25
- 100
- 65
- 77
- 120
- 30
- 35
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
- 0.85 1.2
V
IS
- - 40
A
trr
TJ = 25°C, IF = 40A
- 45
70
nS
Qrr
di/dt = 100A/μs(Note3)
- 80 120
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25,VDD=50V,VG=10V,L=1mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
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Test Circuit
1) EAS test Circuit
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NCE01H14D
2) Gate charge test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics (Curves)
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NCE01H14D
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature()
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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