NCE01H10 Datasheet PDF - NCE Power Semiconductor

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NCE01H10
NCE Power Semiconductor

Part Number NCE01H10
Description NCE N-Channel Enhancement Mode Power MOSFET
Page 7 Pages


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Pb Free Product
NCE01H10
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H10 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 100V,ID =100A
RDS(ON) < 13m@ VGS=10V
(Typ:9.9m)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01H10
NCE01H10
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
ID (100)
Drain Current-Continuous(TC=100)
IDM Pulsed Drain Current
PD Maximum Power Dissipation
Derating factor
EAS Single pulse avalanche energy (Note 5)
TJ,TSTG
Operating Junction and Storage Temperature Range
Limit
100
±20
100
80
380
200
1.33
800
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE01H10
Thermal Characteristic
RθJC
Thermal Resistance,Junction-to-Case (Note 2)
0.75 /W
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Condition
Min Typ Max Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
On Characteristics (Note 3)
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
100 110
--
--
-
1
±100
V
μA
nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
gFS Forward Transconductance
Dynamic Characteristics (Note4)
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=50V,ID=40A
23
- 9.9
100 -
4
13
-
V
m
S
Clss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 4)
VDS=50V,VGS=0V,
F=1.0MHz
- 4800
- 340
- 150
-
-
-
PF
PF
PF
td(on)
Turn-on Delay Time
- 15
-
nS
tr
Turn-on Rise Time
VDD=50V,ID=40A
- 50
-
nS
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=2.5
- 40
-
nS
tf Turn-Off Fall Time
- 55
-
nS
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=80V,ID=40A,
VGS=10V
- 85
- 18
- 28
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
VSD Diode Forward Voltage (Note 3)
IS Diode Forward Current (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V,IS=40A
-
TJ = 25°C, IF = 40A
di/dt = 100A/μs(Note3)
- - 1.2
- - 57
- 38
80
- 53 100
V
A
nS
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
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Test Circuit
1) EAS test Circuit
Pb Free Product
NCE01H10
2) Gate charge test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics (Curves)
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NCE01H10
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature()
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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