NCE0106Z Datasheet PDF - NCE Power Semiconductor

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NCE0106Z
NCE Power Semiconductor

Part Number NCE0106Z
Description NCE N-Channel Enhancement Mode Power MOSFET
Page 7 Pages


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Pb Free Product
NCE0106Z
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0106Z uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 100V,ID = 6A
RDS(ON) < 140m@ VGS=10V (Typ:110m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
D
G
S
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-92 view
Package Marking and Ordering Information
Device Marking
Device
Device Package
0106Z
NCE0106Z
TO-92
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
6
24
3
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
41.7 /W
Min Typ Max Unit
100 110
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Pb Free Product
NCE0106Z
VGS=±20V,VDS=0V
- - ±100 nA
VDS=VGS,ID=250μA
VGS=10V, ID=5A
VDS=5V,ID=2.9A
1.2 1.8
- 110
-8
2.5
140
-
V
m
S
VDS=25V,VGS=0V,
F=1.0MHz
- 690
- 120
- 90
-
-
-
PF
PF
PF
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
VDS=30V,ID=3A,
VGS=10V
- 11
- 7.4
- 35
- 9.1
- 15.5
- 3.2
- 4.7
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=6A
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Test Circuit
1EAS test circuit
Pb Free Product
NCE0106Z
2Gate charge test circuit
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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NCE0106Z
Pb-Free Product
Typical Electrical and Thermal Characteristics (curves)
Figure1. Source-Drain Diode Forward Voltage
Figure2. Safe operating area
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
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