N08L163WC1C Datasheet PDF - NanoAmp Solutions


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N08L163WC1C
NanoAmp Solutions

Part Number N08L163WC1C
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
Page 9 Pages

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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08L163WC1C
Advance Information
www.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K × 16 bit
Overview
The N08L163WC1C is an integrated memory
device containing a 8 Mbit Static Random Access
Memory organized as 524,288 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. Byte controls (UB and LB) allow the upper
and lower bytes to be accessed independently and
can also be used to deselect the device. The
N08L163WC1C is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 512Kb x
16 SRAMs
Features
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Avaliable
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply (Vcc)
Speed
N08L163WC1CT1 44-TSOP II Pb-Free -40oC to +85oC 2.2V - 3.6V 55ns
Standby
Current
(ISB),
Typical
Operating Current
(Icc), Typical
2 µA 1.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 VSS
33 VCC
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 A8
27 A9
26 A10
25 A11
24 A12
23 A13
Pin Name
A0-A18
WE
CE
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Stock No. 23394-B 01/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
N08L163WC1C
Advance Information
www.DataSheet4U.com
Address
Inputs
A4 - A18
Page
Address
Decode
Logic
CE
WE
OE Control
UB Logic
LB
32K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXX
XXXHH
L L X3 L1 L1
L H L L1 L1
L H H L1 L1
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Write3
Read
Active
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0
- I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are inter-
nally isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
10 pF
10 pF
Stock No. 23394-B 01/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N08L163WC1C
NanoAmp Solutions, Inc.
Advance Information
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Absolute Maximum Ratings
Item
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
Rating
–0.3 to VCC+0.3
–0.3 to 4.5
500
–65 to 150
-40 to +85
260oC, 10sec
Unit
V
V
mW
oC
oC
oC
Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min. Typ1 Max Unit
Supply Voltage
VCC
2.2 3.0 3.6 V
Data Retention Voltage
VDR
Chip Disabled
1.5
V
Input High Voltage
VIH
Vcc = 2.2V to 2.7V
Vcc = 2.2V to 2.7V
1.8
2.2
VCC+0.3
VCC+0.3
V
Input Low Voltage
VIL
Vcc = 2.2V to 2.7V
Vcc = 2.2V to 2.7V
–0.3
-0.3
0.6 V
0.8
Output High Voltage
VOH
IOH = -0.1mA, Vcc = 2.2V
IOH = -1.0mA, Vcc = 2.7V
2.0
2.4
V
Output Low Voltage
VOL
IOL = 0.1mA, Vcc = 2.2V
IOL = 2.1mA, Vcc = 2.2V
0.4
V
0.4
Input Leakage Current
ILI
VIN = 0 to VCC
-1
1 µA
Output Leakage Current
ILO
OE = VIH or Chip Disabled
-1
1 µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
-L
1.5
1.5
3.0
3.0
mA
Read/Write Operating Supply Current
@ fmax
ICC2
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
-L
12.0
12.0
20.0
15.0
mA
Maximum Standby Current
VIN = VCC or 0V
ISB1
Chip Disabled
tA= 85oC, VCC = 3.6 V
-L
2.0 20
2.0 8 µA
Maximum Data Retention Current
Vcc = 1.5V, CE Vcc - 0.2V,
IDR
VIN Vcc - 0.2V or VIN
0.2V
-L
10
4 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23394-B 01/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N08L163WC1C
Advance Information
www.DataSheet4U.com
0.1VCC to 0.9 VCC
1V/ns
0.5 VCC
CL = 50pF
-40 to +85 oC
Timing
Item
Read Cycle Time
Address Access Time (Random Access)
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Symbol
tRC
tAA
tCO
tOE
tLB, tUB
tLZ
tOLZ
tLBZ, tUBZ
tHZ
tOHZ
tLBHZ, tUBHZ
tOH
55
Min Max
55
55
55
25
55
10
5
10
20
20
20
10
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
tWC
tCW
tAW
tLBW, tUBW
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
55
40
40
40
40
0
0
25
0
10
20
Note:
1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization.
2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) 100us or stable at Vcc(min) 100us.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23394-B 01/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4




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