N0530YN250 Datasheet PDF - IXYS


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N0530YN250
IXYS

Part Number N0530YN250
Description Phase Control Thyristor
Page 12 Pages

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Date:- 17th June, 2014
Data Sheet Issue:- 1
Phase Control Thyristor
Types N0530YN220 and N0530YN250
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
(continuous, 50Hz)
Critical rate of rise of on-state current (note 6) (repetitive, 50Hz, 60s)
(non-repetitive)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Anode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.
Data Sheet. Types N0530YN220 and N0530YN250 Issue 1
Page 1 of 12
MAXIMUM
LIMITS
2200-2500
2300-2600
2200-2500
2300-2600
MAXIMUM
LIMITS
530
370
215
1040
725
6300
7000
198×103
245×103
80
160
320
5
3
30
-60 to +125
-60 to +125
UNITS
V
V
V
V
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
V
W
W
°C
°C
June, 2014



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Characteristics
Phase Control Thyristor Types N0530YN220 and N0530YN250
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irr Reverse recovery current
trr Reverse recovery time
tq Turn-off time
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.0
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 1.57 ITM=540A
- 3.50 ITM=1980A
- 1.10
V
V
V
- 1.25
m
- - VD=67% VDRM, linear ramp, gate o/c
- 70 Rated VDRM
- 70 Rated VRRM
- 2.50
Tj=25°C
- 250
VD=10V, IT=3A
V/µs
mA
mA
V
mA
- 0.25 Rated VDRM
- 300 Tj=25°C
-
2.5
VD=67% VDRM, IT=2000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
- 1150
V
mA
µs
µC
- 1000
µC
ITM=400A, tp=500µs, di/dt=10A/µs, Vr=100V
- 100
A
- 20
µs
200
400
ITM=400A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=67%VDRM, dVdr/dt=50V/µs
µs
- 0.048 Double side cooled
K/W
- 0.104 Anode side cooled
- 0.088 Cathode side cooled
K/W
- 11.0 Note 2.
kN
110 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces, please consult factory.
Data Sheet. Types N0530YN220 and N0530YN250 Issue 1
Page 2 of 12
June, 2014



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Phase Control Thyristor Types N0530YN220 and N0530YN250
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
22
25
VDRM VRRM
V
2200
2500
VDSM VRSM
V
2300
2600
VD VR
DC V
1650
1875
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 320A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 160A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types N0530YN220 and N0530YN250 Issue 1
Page 3 of 12
June, 2014



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Phase Control Thyristor Types N0530YN220 and N0530YN250
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
I AV = −VT 0 +
VT
2
0
+
4
ff
2
rT
WAV
2 ff 2 rT
and:
Where VT0=1.10V, rT=1.25mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
WAV
=
T
Rth
T = Tj max TK
Supplementary Thermal Impedance
Conduction Angle
30° 60° 90° 120°
Square wave Double Side Cooled
0.0721 0.0590 0.0529 0.0494
Square wave Anode Side Cooled
0.1192 0.1058 0.1000 0.0968
Sine wave Double Side Cooled
0.0550 0.0455 0.0429 0.0414
Sine wave Anode Side Cooled
0.1007 0.0922 0.0901 0.0890
180°
0.0455
0.0932
0.0400
0.0880
270°
0.0423
0.0901
d.c.
0.0400
0.0880
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 7 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT ) + C IT + D IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A 0.9850706
B 0.03454119
C 7.284456×10-4
D 7.947626×10-4
125°C Coefficients
A 0.8565433
B 0.04218399
C 1.1989117×10-3
D 6.617175×10-4
Data Sheet. Types N0530YN220 and N0530YN250 Issue 1
Page 4 of 12
June, 2014




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