MWI50-12A7T Datasheet PDF - IXYS

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MWI50-12A7T
IXYS

Part Number MWI50-12A7T
Description IGBT Module
Page 4 Pages


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MWI 50-12 A7
MWI 50-12 A7T
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Type:
MWI 50-12 A7
MWI 50-12 A7T
NTC - Option:
without NTC
with NTC
13
1
2
3
4
17
59
6 10
7 11
8 12
IC25 = 85 A
V
CES
= 1200 V
VCE(sat) typ. = 2.2 V
T
16
15
14
NTC
T E72873
See outline drawing for pin arrangement
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
t
SC
(SCSOA)
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
85
60
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 100
VCEK VCES
V
CE
=
V;
CES
VGE
=
±15
V;
R
G
=
22
Ω;
TVJ
=
125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
350 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 2 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 22 Ω
2.2 2.7 V
2.5 V
4.5 6.5 V
4 mA
3 mA
200 nA
100 ns
70 ns
500 ns
70 ns
7.6 mJ
5.6 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 50 A
(per IGBT)
3300
230
pF
nC
0.35 K/W
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
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MWI 50-12 A7
MWI 50-12 A7T
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
110 A
70 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
RthJC
Conditions
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 50 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
2.2 2.6 V
1.6 1.8 V
40 A
200 ns
0.61 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.5 V; R0 = 20.7 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 6 mΩ
Thermal Response
Temperature Sensor NTC (MWI ... A7T version only)
Symbol
Conditions
R25
B
25/50
Module
Symbol
TVJ
Tstg
VISOL
Md
T = 25°C
Conditions
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Characteristic Values
min. typ. max.
4.75 5.0 5.25 kΩ
3375
K
Maximum Ratings
-40...+150
-40...+125
°C
°C
2500
V~
2.7 - 3.3
Nm
IGBT (typ.)
Cth1 = 0.22 J/K; Rth1 = 0.26 K/W
Cth2 = 1.74 J/K; Rth2 = 0.09 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.151 J/K; Rth1 = 0.482 K/W
Cth2 = 1.003 J/K; Rth2 = 0.124 K/W
Dimensions in mm (1 mm = 0.0394")
Symbol
Rpin-chip
dS
d
A
R
thCH
Weight
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Characteristic Values
min. typ. max.
5 mΩ
6 mm
6 mm
0.02 K/W
180 g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Higher magnification on page B3 - 72
20070912a
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120
A
100
IC
80
TJ = 25°C
60
VGE=17V
15V
13V
11V
40
9V
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V
VCE
Fig. 1 Typ. output characteristics
120
A
100
VCE = 20V
TJ = 25°C
IC 80
60
40
20
0
5 6 7 8 9 10 11 V
VGE
Fig. 3 Typ. transfer characteristics
20
V
VGE 15
VCE = 600V
IC = 50A
10
5
0
0 50 100 150 200 250 nC
QG
Fig. 5 Typ. turn on gate charge
MWI 50-12 A7
MWI 50-12 A7T
120
A TJ = 125°C
100
IC
80
60
VGE=17V
15V
13V
11V
40 9V
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V
VCE
Fig. 2 Typ. output characteristics
180
1A50
IF
120
TJ = 125°C
TJ = 25°C
90
60
30
0
0 1 2 3 V4
VF
Fig. 4 Typ. forward characteristics of
free wheeling diode
120 300
A
IRM
80
trr
ns
trr
200
40
0
0
IRM
200 400
TJ = 125°C
VR = 600V
IF = 50A
100
0MWI50-12A7
600 8A00/μs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
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24
mJ
18
Eon
td(on)
120
ns
90
t
12
tr
6
Eon
VCE = 600V
VGE = ±15V
RG = 22Ω
TJ = 125°C
60
30
00
0 20 40 60 80 100 A
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
20
mJ
VCE = 600V
VGE = ±15V
Eon 15
IC = 50A
TJ = 125°C
10
5
td(on)
Eon
tr
240
ns
180
t
120
60
00
0 10 20 30 40 50 60 70 80 90 100 Ω
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
100
ICM 80
60
40
RG = 22Ω
TJ = 125°C
VCEK < VCES
20
0
0 200 400 600 800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
MWI 50-12 A7
MWI 50-12 A7T
12
mJ
10
Eoff 8
600
Eoff
ns
500
td(off)
400 t
6 300
VCE = 600V
4
VGE = ±15V 200
RG = 22Ω
2
TJ = 125°C
tf
100
00
0 20 40 60 80 100 A
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
10
mJ
8
Eoff
6
VCE = 600V
VGE = ±15V
IC = 50A
TJ = 125°C
td(off)
Eoff
1500
ns
1200
t
900
4 600
2 300
0 tf 0
0 10 20 30 40 50 60 70 80 90 100 Ω
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
ZthJC
0.01
diode
IGBT
0.001
0.0001
single pulse
0.00001
0.00001 0.0001 0.001
0.01
MWI50-12A7
0.1 s 1
t
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
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