MWI50-06A7 Datasheet PDF - IXYS

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MWI50-06A7
IXYS

Part Number MWI50-06A7
Description IGBT Module
Page 4 Pages


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MWI 50-06 A7
MWI 50-06 A7T
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Type:
MWI 50-06 A7
MWI 50-06 A7T
NTC - Option:
without NTC
with NTC
13
1
2
3
4
17
IC25 = 72 A
V
CES
= 600 V
VCE(sat) typ. = 1.9 V
59
6 10
7 11
8 12
T
16
15
14
NTC
T E72873
See outline drawing for pin arrangement
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
t
SC
(SCSOA)
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
72
50
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 100
VCEK VCES
V
CE
=
V;
CES
VGE
=
±15
V;
R
G
=
22
Ω;
TVJ
=
125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
225 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 1 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 50 A
VGE = ±15 V; RG = 22 Ω
1.9 2.4 V
2.2 V
4.5 6.5 V
0.6 mA
0.7 mA
200 nA
50 ns
60 ns
300 ns
30 ns
2.3 mJ
1.7 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300V; VGE = 15 V; IC = 50 A
(per IGBT)
2800
120
pF
nC
0.55 K/W
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-4



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MWI 50-06 A7
MWI 50-06 A7T
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
72 A
45 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
RthJC
Conditions
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C
VR = 300 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
1.6 1.8 V
1.3 1.5 V
25 A
90 ns
1.19 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.82 V; R0 = 28 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 0.89 V; R0 = 8 mΩ
Thermal Response
Temperature Sensor NTC (MWI ... A7T version only)
Symbol
Conditions
R25
B
25/50
Module
Symbol
TVJ
Tstg
VISOL
Md
T = 25°C
Conditions
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Characteristic Values
min. typ. max.
4.75 5.0 5.25 kΩ
3375
K
Maximum Ratings
-40...+150
-40...+125
°C
°C
2500
V~
2.7 - 3.3
Nm
IGBT (typ.)
Cth1 = 0.201 J/K; Rth1 = 0.42 K/W
Cth2 = 1.252 J/K; Rth2 = 0.131K/W
Free Wheeling Diode (typ.)
Cth1 = 0.116 J/K; Rth1 = 0.973 K/W
Cth2 = 0.88 J/K; Rth2 = 0.217 K/W
Dimensions in mm (1 mm = 0.0394")
Symbol
Rpin-chip
dS
d
A
R
thCH
Weight
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Characteristic Values
min. typ. max.
5 mΩ
6 mm
6 mm
0.02 K/W
180 g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Higher magnification on page B3 - 72
20070912a
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150
12A0
IC
90
60
VGE= 17V
15V
13V
11V
30 9V
TVJ = 25°C
0
0 1 2 3 4 5V6
VCE
Fig. 1 Typ. output characteristics
150
12A0
IC
90
60
TVJ = 125°C
TVJ = 25°C
30
VCE = 20V
0
4 6 8 10 12 14 V 16
VGE
Fig. 3 Typ. transfer characteristics
20
V
15
VGE
10
5
0
0
Fig. 5
VCE = 300V
IC = 50A
40 80 120 nC 160
QG
Typ. turn on gate charge
MWI 50-06 A7
MWI 50-06 A7T
150
IC 12A0
90
60
VGE= 17V
15V
13V
11V
9V
30
TVJ = 125°C
0
0 1 2 3 4 5V 6
VCE
Fig. 2 Typ. output characteristics
90
7A5
IF
60
45
TVJ = 125°C
TVJ = 25°C
30
15
0
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 4 Typ. forward characteristics of
free wheeling diode
50 150
4A0
IRM
30
trr
1n2s0 trr
90
20 60
10
IRM
0
0
200
400
600
TVJ = 125°C
VR = 300V
IF = 30A
30
MWI5006A7
0
8A00/μs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
3-4



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10.0
mJ
td(on)
100
ns
7.5
Eon
5.0
2.5
Eon
0.0
0
40
75
t
tr
VCE = 300V
VGE = ±15V
RG = 22Ω
TVJ = 125°C
50
25
0
80 A 120
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
4
mJ
Eon
3
2
td(on)
80
ns
Eon
60 t
tr
VCE = 300V
VGE = ±15V
IC = 50A
TVJ = 125°C
40
1 20
0 10 20 30 40 50 Ω 60
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
ICM 90
60
30
RG = 22 Ω
TVJ = 125°C
0
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
MWI 50-06 A7
MWI 50-06 A7T
4 400
mJ
Eoff 3
2
1
Eoff
td(off)
VCE = 300V
VGE = ±15V
RG = 22Ω
TVJ = 125°C
ns
300
t
200
100
tf
00
0 40 80 A 120
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
3
mJ
Eoff
2
1
600
Eoff
td(off)
VCE = 300V
VGE = ±15V
IC = 50A
TVJ = 125°C
ns
400 t
200
0 tf 0
0 10 20 30 40 50 Ω 60
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
ZthJC
0.1
diode
IGBT
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01
0.1
t
MWI5006A7
1 s 10
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
4-4



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