MURF3030PT Datasheet PDF - KD

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MURF3030PT
KD

Part Number MURF3030PT
Description SUPER FAST RECOVERY SILICON RECTIFIER
Page 2 Pages


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MURF3005PT THRU MURF3060PT
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 30.0 Ampere
FEATURES
Glass Passivated Die Construction
Super-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
MECHANICAL DATA
Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
TO-3P
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
3.6± 0.15
PIN
12 3
3.0± 0.1
2.2± 0.15
1.2± 0.15
5.4± 0.15
0.6± 0.1
Dimensions in millimeters
PIN 1 -
PIN 3 -
2.4± 0.2
+
Case, PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TC = 100°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
Forward Voltage
@IF = 15.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Symbol
MURF
3005PT
MURF
3010PT
MURF
3015PT
MURF
3020PT
MURF
3030PT
MURF
3040PT
MURF
3060PT
Unit
VRRM
VRWM 50 100 150 200 300 400 600 V
VR
VR(RMS)
35
70 105 140 210 280 420 V
IO 30 A
IFSM
V FM
IRM
trr
Cj
Tj, TSTG
0.975
35
150
300
10
500
-65 to +150
1.3
50
120
A
1.7 V
µA
nS
pF
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.



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MURF3005PT THRU MURF3060PT
RATINGS AND CHARACTERISTIC CURVES
30 100
24
18
12
6
0
0
300
50 100
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
8.3 ms single half-sine-wave
JEDEC method
3005 - 3020
3030 - 3040
10
3040 - 3060
1.0
Pulse width = 300µ s
2% duty cycle
0.1
0
50. 01. 51.
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
400
Tj = 25°C
f = 1.0MHz
200
100
100
3005PT -
3040PT
3060PT
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
50NI (Non-inductive)
10NI
(+)
50V DC
Approx
(-)
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
1.0
NI
Oscilloscope
(Note 1)
(+)
10
0.1
+0.5A
1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
100
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit



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