MUR5005R Datasheet PDF - GeneSiC

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MUR5005R
GeneSiC

Part Number MUR5005R
Description Silicon Super Fast Recovery Diode
Page 3 Pages


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Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MUR5005 thru MUR5020R
VRRM = 50 V - 200 V
IF = 50 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR5005 (R)
MUR5010 (R)
MUR5020 (R)
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC 125 °C
50
35
50
50
100 200
70 140
100 200
50 50
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
Tj
Tstg
600
-55 to 150
-55 to 150
600
-55 to 150
-55 to 150
600
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MUR5005 (R)
Diode forward voltage
Reverse current
Recovery Time
Maximum reverse recovery
time
VF IF = 50 A, Tj = 25 °C
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 125 °C
TRR
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
1
10
3
75
MUR5010 (R)
1
10
3
75
MUR5020 (R)
1
10
3
75
Unit
V
V
V
A
A
°C
°C
Unit
V
μA
mA
ns
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MUR5005 thru MUR5020R
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MUR5005 thru MUR5020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M DO- 5 (DO-203AB)
J
K
P
D
G
FE
C
A
B
N
Inches
Millimeters
Min
A
B 0.669
C -----
D -----
E 0.422
F 0.115
G -----
J -----
K 0.236
M -----
N -----
P 0.140
Max Min
1/4 –28 UNF
0.687
17.19
0.794
-----
1.020
-----
0.453
10.72
0.200
2.93
0.460
-----
0.280
-----
----- 6.00
0.589
-----
0.063
-----
0.175
3.56
Max
17.44
20.16
25.91
11.50
5.08
11.68
7.00
-----
14.96
1.60
4.45
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