MUR1620CTD Datasheet PDF - Thinki Semiconductor

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MUR1620CTD
Thinki Semiconductor

Part Number MUR1620CTD
Description 16.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers
Page 2 Pages


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MUR1620CTA thru MUR1660CTA
®
MUR1620CTA thru MUR1660CTA
Pb
Pb Free Plating Product
16.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Doubler
Common Anode Tandem Polarity
Suffix "CTA" Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
MUR1620CT
SYMBOL MUR1620CTA
MUR1620CTD
VRRM
200
MUR1640CT
MUR1640CTA
MUR1640CTD
400
MUR1660CT
MUR1660CTA UNIT
MUR1660CTD
600 V
Maximum RMS Voltage
VRMS
140
280 420 V
Maximum DC Blocking Voltage
VDC 200
400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150 A
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
0.98
1.3
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
10.0
250
Maximum Reverse Recovery Time (Note 1) Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
R JC
TJ, TSTG
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
1.7 V
uA
uA
nS
pF
oCW
oC
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/



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MUR1620CTA thru MUR1660CTA
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
0
0 50
100
CASE TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
80
MUR1620CTA
MUR1640CTA
8
MUR1660CTA
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
200
175
150
125
100
75
50
25
0
1
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/



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