MUN5115DW1 Datasheet PDF - ON Semiconductor

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MUN5115DW1
ON Semiconductor

Part Number MUN5115DW1
Description Dual PNP Bias Resistor Transistors
Page 8 Pages


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MUN5115DW1,
NSBA114TDXV6,
NSBA114TDP6
Dual PNP Bias Resistor
Transistors
R1 = 10 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
MUN5115DW1T1G,
SMUN5115DW1T1G
SOT363
3,000/Tape & Reel
NSBA114TDXV6T1G
SOT563
4,000/Tape & Reel
NSBA114TDXV6T5G
SOT563
8,000/Tape & Reel
NSBA114TDP6T5G
SOT963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
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PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT363
CASE 419B
6
0E M G
G
1
SOT563
CASE 463A
0E M G
G
1
SOT963
CASE 527AD
MG
G
1
0E/T
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTA114TD/D



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MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5115DW1 (SOT363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5115DW1 (SOT363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBA114TDXV6 (SOT563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBA114TDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBA114TDP6 (SOT963) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBA114TDP6 (SOT963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
55 to +150
357
2.9
350
500
4.0
250
55 to +150
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
55 to +150
Unit
mW
mW/C
C/W
mW
mW/C
C/W
C/W
C
mW
mW/C
C/W
mW
mW/C
C/W
C
MW
mW/C
C/W
MW
mW/C
C/W
C
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MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
ELECTRICAL CHARACTERISTICS (TA = 25C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Collector-Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
hFE
160 250
Collector-Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
0.6
Input Voltage (On)
(VCE = 0.2 V, IC = 10 mA)
Vi(on)
1.4
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
Input Resistor
R1 7.0 10
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%.
R1/R2
Max
100
500
0.9
0.25
0.2
13
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
V
Vdc
Vdc
Vdc
Vdc
kW
400
350
300
250
200
(1) (2) (3)
150
(1) SOT363; 1.0 1.0 Inch Pad
(2) SOT563; Minimum Pad
(3) SOT963; 100 mm2, 1 oz. Copper Trace
100
50
0
50 25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
TYPICAL CHARACTERISTICS
MUN5115DW1, NSBA114TDXV6
1
IC/IB = 10
1000
75C
0.1
25C 25C
0.01
75C
TA = 25C
100
10
25C
VCE = 10 V
0.001
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
1
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
10 100
9
f = 10 kHz
75C
8
7
lE = 0 A
TA = 25C
10
25C
61
5
4 0.1 TA = 25C
3
2 0.01
1 VO = 5 V
0 0.001
0 10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
VO = 0.2 V
TA = 25C
1
75C
25C
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
50
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