MTB09P04DFP Datasheet PDF - CYStech Electronics

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MTB09P04DFP
CYStech Electronics

Part Number MTB09P04DFP
Description P-Channel Enhancement Mode Power MOSFET
Page 8 Pages


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CYStech Electronics Corp.
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB09P04DFP BVDSS
ID @ VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-15A
-40V
-56A
6.1mΩ(typ)
7.8mΩ(typ)
Features
Single Drive Requirement
Low On-resistance
Fast switching Characteristic
Pb-free lead plating package
Symbol
MTB09P04DFP
Outline
TO-220FP
GGate
DDrain
SSource
GDS
Ordering Information
Device
Package
MTB09P04DFP-0-UB-S
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB09P04DFP
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C (Package limited)
Continuous Drain Current @VGS=-10V, TC=25°C (Silicon limited)
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
(Note 2)
Continuous Drain Current @VGS=-10V, TA=70°C
(Note 2)
Pulsed Drain Current
(Note 4)
TC=25
(Note 1)
Power Dissipation
TC=100
TA=25
(Note 1)
(Note 2)
TA=70
(Note 2)
Single Pulse Avalanche Energy @L=1mH, IAS=-23A
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
(Note 3)
(Note 3)
Symbol
VDS
VGS
ID
IDSM
IDM
PD
PDSM
EAS
IAS
Tj, Tstg
Limits
-40
±20
-56
-83
-52.5
-12.4
-9.9
-332
89
35.6
2
1.3
264
-23
-55~+150
Unit
V
A
W
mJ
A
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t10s (Note 1)
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Symbol
Rth,j-c
Rth,j-a
Value
1.4
15
62.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C.
4. Pulse width 300μs pulses and duty cycle 0.5%.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB09P04DFP
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 3/8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
-40
-1.0
-
-
-
-
*RDS(ON)
-
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*IS -
*VSD
-
*trr -
*Qrr -
-
-
51
-
-
-
6.1
7.8
121.5
18.2
19.3
21.2
25
148.4
52.6
6576
554
291
-
-0.87
23
12
-
-2.5
-
±100
-1
-25
7.7
10.6
-
-
-
-
-
-
-
-
-
-
-56
-1.2
-
-
V
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
S VDS =-5V, ID=-25A
nA VGS=±20V
μA
VDS =-32V, VGS =0V
VDS =-32V, VGS =0V, Tj=70°C
mΩ
VGS =-10V, ID=-25A
VGS =-4.5V, ID=-15A
nC ID=-25A, VDS=-20V, VGS=-10V
ns
VDS=-20V, VGS=-10V, RG=3.3Ω,
ID=-25A
pF VGS=0V, VDS=-20V, f=1MHz
A
V IS=-25A, VGS=0V
ns
nC
IF=-25A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTB09P04DFP
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 4/8
Typical Characteristics
Typical Output Characteristics
100
10V,9V, 8V, 7V, 6V, 5V, 4V
80
3.5V
60
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
40 3V 0.8
20 2.5V
-VGS=2V
0
01 23 45
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
-4.5V
-3V
10
-10V
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
1
0.01
0.1 1 10
-ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160 ID=-25A
140
120
100
80
60
40
20
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
0.2
0
5 10 15
-IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2
1.6 VGS=-10V, ID=-25A
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 6.1mΩ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB09P04DFP
CYStek Product Specification



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