MT6L75FS Datasheet PDF - Toshiba Semiconductor

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MT6L75FS
Toshiba Semiconductor

Part Number MT6L75FS
Description VHF-UHF Band Low Noise Amplifier Application
Page 3 Pages


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MT6L75FS
TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE
MT6L75FS
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
Two devices are built in to the fine pich small mold package (6pins):fs6
It exsels in the buffer and oscillation use.
Mounted Devices
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Three-pin fSM mold products are corresponded
Q1
MT3S07FS
Q2
MT3S106FS
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector power dissipation
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC (Note 1)
RATING
Q1 Q2
10 13
56
1.5 1
25 80
10 20
100
110 (Note 2)
UNIT
V
V
V
mA
mA
mW
1.COLLECTOR 1
2.EMITTER1
3.COLLECTOR2
4.BASE2
5.EMITTER2
6.BASE1
fS6
JEDEC
JEITA
TOSHIBA
2-1F1A
Weight : 0.001g (typ.)
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1 : 10 mm2 × 1.0 mm (t) at the time of glass epoxy printed circuit board mounting.
Note 2 : At the time of two-element operation
Marking (top view)
6 54
52
Pin Assignment (top view)
B1 E2 B2
Q1 Q2
12 3
C1 E1 C2
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MT6L75FS
ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C)
CHARACTERISTICS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
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SYMBOL
CONDITION
ICBO
IEBO
hFE
Cre (Note)
fT
S21e2 (1)
S21e2 (2)
NF
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 3 V, IC = 10 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C)
MIN. TYP. MAX. UNIT
⎯ ⎯ 0.1 μA
⎯ ⎯ 1 μA
70 140
0.4 0.65 pF
10 12 GHz
8
dB
7.5 10
1.5 3 dB
CHARACTERISTICS
SYMBOL
CONDITION
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
DC Current Gain
hFE VCE = 1 V, IC = 5 mA
Reverse Transfer Capacitance
Cre (Note) VCB = 1 V, IE = 0, f = 1 MHz
Transition Frequency
fT VCE = 1 V, IC = 10 mA
Insertion Gain
S21e2 (1)
S21e2 (2)
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
Noise Figure
NF VCE = 1 V, IC = 10 mA, f = 2 GHz
Note : Cre is measured by 3 terminal method capacitance bridge.
MIN. TYP. MAX. UNIT
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.5 μA
110 160
0.5 0.7 pF
6.5 8.5
GHz
8
dB
8.5 10
1.2 2 dB
Caution
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
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MT6L75FS
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RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN GENERAL
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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MT6L75FS VHF-UHF Band Low Noise Amplifier Application MT6L75FS
Toshiba Semiconductor
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