MT6L68FS Datasheet PDF - Toshiba Semiconductor

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MT6L68FS
Toshiba Semiconductor

Part Number MT6L68FS
Description VHF-UHF Band Low Noise Amplifier Application
Page 3 Pages


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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L68FS
MT6L68FS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
Superior noise characteristics
Superior performance in buffer and oscillator applications
Lead (Pb)-free.
www.DataSheet4U.comMounted Devices
Corresponding three-pin products:
TESM(fSM) mold products
Q1
MT3S06T
(MT3S06FS)
Q2
MT3S11T
(MT3S11FS)
Unit: mm
0.1±0.05
1.0±0.05
0.8±0.05
0.1±0.05
16
25
34
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC (Note 1)
Tj
Tstg
Rating
Q1 Q2
10 13
56
1.5 1
15 40
7 10
100
110 (Note 2)
125
55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation.
1. Collector1 (C1)
2. Emitter1 (E1)
3. Collector2 (C2)
4. Base2 (B2)
5. Emitter2 (E2)
fS6 6. Base1 (B1)
JEDEC
JEIAJ
TOSHIBA
2-1F1A
Weight: 0.001g (typ.)
Marking (top view)
Pin Assignment (top view)
65
1K
12
4
3
654
Q1 Q2
123
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MT6L68FS
Electrical Characteristics Q1 (Ta = 25°C)
Characteristic
Symbol
Condition
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
DC current gain
hFE VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre(Note) VCB = 1 V, IE = 0, f = 1 MHz
Transition frequency
Insertion gain
fT
S21e2 (1)
S21e2 (2)
VCE = 3 V, IC = 5 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 7 mA, f = 2 GHz
Noise figure
NF VCE = 1 V, IC = 3 mA, f = 2 GHz
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Electrical Characteristics Q2 (Ta = 25°C)
Min Typ. Max Unit
⎯ ⎯ 0.1 µA
⎯ ⎯ 1 µA
70 140
0.25 0.5 pF
7 10 GHz
8.5
dB
7 9.5
1.7 3 dB
Characteristic
Symbol
Condition
Collector cutoff current
Emitter cutoff current
DC current gain
Reverse transfer capacitance
Transition frequency
Insertion gain
Noise figure
ICBO
IEBO
hFE
Cre(Note)
fT
S21e2 (1)
S21e2 (2)
NF
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
Min Typ. Max Unit
⎯ ⎯ 0.1 µA
⎯ ⎯ 1 µA
100 160
0.65 0.9 pF
4 6 GHz
3.5
dB
4 6.5
2.4 3.2 dB
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
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MT6L68FS VHF-UHF Band Low Noise Amplifier Application MT6L68FS
Toshiba Semiconductor
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