MT6L57AE Datasheet PDF - Toshiba Semiconductor

www.Datasheet-PDF.com

MT6L57AE
Toshiba Semiconductor

Part Number MT6L57AE
Description VHF-UHF Band Low Noise Amplifier Application
Page 3 Pages


MT6L57AE datasheet pdf
Download PDF
MT6L57AE pdf
View PDF for Mobile

No Preview Available !

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L57AE
MT6L57AE
VHF~UHF Band Low Noise Amplifier Applications
Two devices are built in to the super-thin and extreme super mini (6
pins) package: ES6
Mounted Devices
www.DataSheet4U.com
Three-pins (SSM/TESM) mold
products are corresponded.
Q1: SSM (TESM)
MT3S06S
(MT3S06T)
Q2: SSM (TESM)
MT3S04AS
(MT3S04AT)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1 Q2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
(Note 1)
Tj
Tstg
10 10
55
1.5 2
15 40
7 10
100
125
55~125
Note 1: Total power dissipation of Q1 and Q2.
Marking
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2N1C
Weight: 0.003 g (typ.)
Pin Assignment (top view)
1 2003-07-31



No Preview Available !

MT6L57AE
Electrical Characteristics Q1 (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Noise figure
www.DataSheet4U.com
Reverse transfer capacitance
ICBO
IEBO
hFE
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
Cre
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCE = 3 V, IC = 5 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 7 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 3 mA, f = 2 GHz
VCB = 1 V, IE = 0, f = 1 MHz (Note 2)
70
7
4.5
0.1 µA
1 µA
140
10 GHz
7.5
dB
8
1.7 3
dB
1.6 3
0.35 0.75 pF
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Electrical Characteristics Q2 (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Noise figure
Reverse transfer capacitance
ICBO
IEBO
hFE
fT (1)
fT (2)
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
Cre
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA
VCE = 3 V, IC = 7 mA
VCE = 1 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 20 mA, f = 1 GHz
VCE = 1 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 1 V, IE = 0, f = 1 MHz (Note 2)
80
2
5
7.5
0.1 µA
1 µA
160
4.5
GHz
7
8.5
dB
11
1.3 2.2
dB
1.2 2
0.9 1.25 pF
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
2 2003-07-31



No Preview Available !

MT6L57AE
www.DataSheet4U.com
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
3 2003-07-31



MT6L57AE datasheet pdf
Download PDF
MT6L57AE pdf
View PDF for Mobile


Related : Start with MT6L57A Part Numbers by
MT6L57AE VHF-UHF Band Low Noise Amplifier Application MT6L57AE
Toshiba Semiconductor
MT6L57AE pdf
MT6L57AFS VHF-UHF Band Low Noise Amplifier Application MT6L57AFS
Toshiba Semiconductor
MT6L57AFS pdf
MT6L57AT VHF-UHF Band Low Noise Amplifier Application MT6L57AT
Toshiba Semiconductor
MT6L57AT pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact