MT6L55E Datasheet PDF - Toshiba Semiconductor

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MT6L55E
Toshiba Semiconductor

Part Number MT6L55E
Description VHF-UHF Band Low Noise Amplifier Application
Page 3 Pages


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Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L55E
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
MT6L55E
Unit: mm
Two devices are built into the super-thin and ultra-super-mini (6-pin)
ES6 package.
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Mounted Devices
Three-pin (SSM/TESM) product No.
Q1: SSM (TESM)
MT3S07S
(MT3S07T)
Q2: TESM
MT3S05T
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2 Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC (Note 1)
Tj
Tstg
10 10
55
1.5 2
25 40
10 10
150
125
55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2N1C
Weight: 3 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board
Marking
Pin Connections
654
B1 E2 B2
AR
Q1 Q2
123
C1 E1 C2
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Electrical Characteristics Q1-Side (Ta = 25°C)
MT6L55E
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Noise figure
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Reverse transfer capacitance
Symbol
Test Condition
ICBO
IEBO
hFE
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
Cre
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCE = 3 V, IC = 10 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCB = 1 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
(Note 2)
70
10
4
0.1 μA
1 μA
140
12 GHz
6.5
dB
7
1.6 3
dB
1.5 3
0.45 0.85 pF
Electrical Characteristics Q2-Side (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Noise figure
Reverse transfer capacitance
ICBO
IEBO
hFE
fT
S21e2 (1)
S21e2 (2)
NF
Cre
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 20 mA, f = 1 GHz
VCE = 1 V, IC = 5 mA, f = 1 GHz
VCB = 1 V, IE = 0, f = 1 MHz
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Min Typ. Max Unit
(Note 2)
80
2
7.5
0.1 μA
1 μA
140
4.5 GHz
7.5
10.5
dB
1.4 2.2 dB
0.95 1.15 pF
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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MT6L55E
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RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN GENERAL
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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