MSAFA1N100P3 Datasheet PDF - Microsemi Corporation

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MSAFA1N100P3
Microsemi Corporation

Part Number MSAFA1N100P3
Description MOSFET Device
Page 2 Pages


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Santa Ana Division
www.DataSheet4U.com
MSAFA1N100P3
MOSFET Device
Features
• Low On-State resistance
• Avalanche and Surge Rated
• High Frequency Switching
• Ultra low Leakage Current
• UIS rated
• Available with Lot Acceptance Testing “L” Suffix
• Available with “J” leads
Applications
• Implantable Cardio Defibrillator
Testing and Screening (per lot)
• 100% Testing at 25C, DC parameters
• Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits)
Maximum Ratings
1 Amp
1000 V
N-Channel
enhancement mode high
density
SYMBOL
VDSS
VGS
ID1
ID2
IDM1
IAR
EAR
EAS
TJ, TSTG
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ TC = 25
Continuous Drain Current @ TC = 100
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
VALUE
1000
±20
1
0.8
4
1
TBD
TBD
-55 to 150
UNIT
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
C
Static Electrical Characteristics
SYMBOL
BVDSS
VGS(TH)2
VGS(TH)1
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
RDS(ON)5
IDSS1
IDSS2
IDSS3
IGSS1
IGSS2
IGSS3
CHARACTERISTIC / TEST CONDITIONS
MIN TYP MAX UNIT
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
1000
Volts
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C)
3.4 Volts
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C)
2 3.5 4.5 Volts
Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C)
12.5 13.5 ohm
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37C)
12.5 ohm
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25C)
11.5 14 ohm
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60C)
15 ohm
Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C)
23.5 ohm
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C)
10 uA
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37C) 1 uA
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125C)
100 uA
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
±100 nA
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37C
10 nA
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125C
500 nA
2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989
Data Sheet # MSC
www.MICROSEMI.com
Updated: December 1999



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Santa Ana Division
www.DataSheet4U.com
MSAFA1N100P3
Fast MOSFET for
Implantable Cardio Defibrillator
Applicaions
Dynamic Electrical Characteristics
SYMBOL
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
td (on)
tr
td (off)
tf
VSD
trr
Qrr
CHARACTERISTIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CONDITIONS
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDS = 0.5BVDSS
IC = 20 mA
Resistive Switching (25C)
VGS = 10V, VDS = 0.5BVDSS
ID = 20 mA
Rg = 1.6 Ohms
Resistive Switching (25C)
VGS = 10V, VDS = 0.5BVDSS
ID = 100 mA
Rg = 1.6 Ohms
VGS =0 V, IS = 1 A
IS = 1 A, d IS / dt = 100 A/us
IS = 1 A, d IS / dt = 100 A/us
MIN TYP MAX UNIT
290 350 pF
36 45 pF
15 25 pF
20 nC
1 nC
10 nC
6.3 ns
5.9 ns
315 ns
2.6 us
6.3 ns
5.8 ns
76 ns
470 ns
1V
130 ns
0.7 uC
2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989
Data Sheet # MSC
www.MICROSEMI.com
Updated: December 1999



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