MSAER30N20A Datasheet PDF - Microsemi Corporation

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MSAER30N20A
Microsemi Corporation

Part Number MSAER30N20A
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 2 Pages


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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
www.DataSheet4U.com
Features
Ultrafast rectifier in parallel with the body diode (MSAE type only)
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
MSAER30N20A
MSAFR30N20A
200 Volts
30 Amps
85 m
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj=
100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
BVDSS
BVDGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
dv/dt
PD
Tj
Tstg
IS
ISM
θJC
200
200
+/-20
+/-30
30
19
120
30
15
200
5.0
300
-55 to +150
-55 to +150
30
120
0.4
DRAIN
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
Datasheet# MSC0256B
SOURCE
GATE



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MSAER30N20A
MSAFR30N20A
www.DataSheet4U.com
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
SYMBOL
BVDSS
BVDSS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VSD
trr
Qrr
CONDITIONS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 1 mA
VGS = ± 20VDC, VDS = 0 TJ = 25°C
T J = 125°C
VDS =0.8BVDSS
TJ = 25°C
VGS = 0 V
T J = 125°C
VGS= 10V, ID= 20A T J = 25°C
I D= 30A T J = 25°C
I D= 20A T J = 125°C
VDS 15 V; ID = 20 A
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, V DS = 100 V,
ID = 30 A, R G = 2.35
VGS = 10 V, V DS = 100V, I D = 30A
IF = IS, VGS = 0 V
IF = 10 A,
-di/dt = 100 A/ µs,
IF = 10 A,
di/dt = 100 A/ µs,
MSAE
MSAF
MSAE
MSAF
MSAE
MSAF
MIN TYP.
200
0.29
2.0
1.5
9
3500
700
110
55
8
30
MAX UNIT
V
V/°C
4.0
±100
±200
25
250
0.085
0.090
V
nA
µA
S
pF
35 ns
190
170
130
115 nC
22
60
1.2 V
1.9
50 ns
950
tbd µC
9
Notes
(1) Pulse test, t 300 µs, duty cycle δ ≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.



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MSAER30N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET MSAER30N20A
Microsemi Corporation
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