MRF21125S Datasheet PDF - Motorola

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MRF21125S
Motorola

Part Number MRF21125S
Description RF POWER FIELD EFFECT TRANSISTORS
Page 12 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF21125/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — –43 dBc
ACPR — –45 dBc
100% Tested under 2–carrier W–CDMA
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21125
MRF21125S
MRF21125SR3
2170 MHz, 125 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
(NI–880)
(MRF21125)
CASE 465C–02, STYLE 1
(NI–880S)
(MRF21125S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
330
1.89
–65 to +150
200
Class
2 (Minimum)
M3 (Minimum)
Max
0.53
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
1



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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
V(BR)DSS
65
Vdc
GateSource Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
10 µAdc
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs 10.8 S
Gate Threshold Voltage
(VDS = 10 V, ID = 300 µA)
VGS(th)
2
4 Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 1300 mA)
VGS(Q)
2.5
3.9
4.5
Vdc
DrainSource OnVoltage
(VGS = 10 V, ID = 1 A)
VDS(on)
0.12
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss 5.4 pF
FUNCTIONAL TESTS (In Motorola Test Fixture) 2carrier WCDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth.
Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
CommonSource Amplifier Power Gain
Gps 12 13 dB
(VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Drain Efficiency
(VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
η
17 18 %
Third Order Intermodulation Distortion
IM3 — –43 40 dBc
(VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 15 MHz and f2 +15 MHz referenced to
carrier channel power.)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 10 MHz and f2 +10 MHz referenced to
carrier channel power.)
ACPR
45 40 dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 20 W Avg, 2carrier WCDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
IRL
12 9.0
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF21125 MRF21125S MRF21125SR3
2
MOTOROLA RF DEVICE DATA



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ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
TYPICAL TWOTONE PERFORMANCE (In Motorola Test Fixture)
CommonSource Amplifier Power Gain
Gps 12 dB
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Drain Efficiency
η 34 %
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Intermodulation Distortion
IMD — –30 dBc
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
TYPICAL CW PERFORMANCE
CommonSource Amplifier Power Gain
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz)
Drain Efficiency
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz)
Gps
η
11.5
46
dB
%
MOTOROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
3



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VGG R1
+
B1
+
R2 C2
R3
+
C3 C4
C5
R4
W1
+
C6 C7 C8 C9 C10 C11
VDD
+
+
C12 C13 C14
RF
INPUT Z1
Z2 Z3 Z4 Z5
C1
Z6 Z7
Z8 Z9 Z10 Z11 Z12
RF
Z13 OUTPUT
C15
DUT C16
Z1 1.212x 0.082Microstrip
Z2 0.236x 0.082Microstrip
Z3 0.086x 0.254Microstrip
Z4 0.357x 0.082Microstrip
Z5 0.274x 1.030Microstrip
Z6 0.466x 0.050Microstrip
Z7 0.501x 0.050Microstrip
Z8 0.600x 1.056Microstrip
Z9
Z10
Z11
Z12
Z13
Raw Board
Material
0.179x 0.219Microstrip
0.100x 0.336Microstrip
0.534x 0.142Microstrip
0.089x 0.080Microstrip
0.620x 0.080Microstrip
0.030Glass Teflon, 2 oz Copper,
3x 5Dimensions,
Arlon GX03005522, εr = 2.55
Figure 1. MRF21125 Test Circuit Schematic
Table 1. MRF21125 Test Circuit Component Designations and Values
Designators
Description
B1
C1
C2, C4, C11, C12
C3, C7
C5, C14
Ferrite Bead (Square), Fair Rite #2743019447
9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X
22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X
5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X
C6 100000 pF Chip Capacitor, B Case, ATC #100B104JCA50X
C8 10000 pF Chip Capacitor, B Case, ATC #100B103JCA50X
C9 7.5 pF Chip Capacitor, B Case, ATC #100B7R5CCA500X
C10 1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X
C13 0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS
C15 16 pF Chip Capacitor, B Case, ATC #100B160KP500X
C16 0.6 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
R1 1.0 k, 1/8 W Chip Resistor
R2 560 k, 1/8 W Chip Resistor
R3 4.7 , 1/8 W Chip Resistor
R4 12 , 1/8 W Chip Resistor
W1 Solid Copper Buss Wire, 16 AWG
MRF21125 MRF21125S MRF21125SR3
4
MOTOROLA RF DEVICE DATA



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