MRF21030R3 Datasheet PDF - Motorola

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MRF21030R3
Motorola

Part Number MRF21030R3
Description RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
Page 8 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF21030/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF21030R3
MRF21030SR3
2.2 GHz, 30 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
NI–400
MRF21030R3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465F–03, STYLE 1
NI–400S
MRF21030SR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
83.3
0.48
–65 to +200
200
Class
2 (Minimum)
M3 (Minimum)
Max
2.1
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF21030R3 MRF21030SR3
1



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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µA)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mA)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
gfs
Ciss
Coss
Crss
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
(1) Part is internally matched both on input and output.
Min Typ Max Unit
65 — — Vdc
——
1 µAdc
——
1 µAdc
2 3 4 Vdc
2 3.3 4.5 Vdc
— 0.29 0.4 Vdc
—2—S
— 98.5 —
— 37 —
— 1.3 —
pF
pF
pF
— 13 — dB
— 33 — %
— –30 — dBc
— –13 —
dB
12 13 — dB
31 33 — %
— –30 –27.5 dBc
— –13 –9
dB
No Degradation In Output Power
Before and After Test
MRF21030R3 MRF21030SR3
2
MOTOROLA RF DEVICE DATA



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VGG B1
+
R1
C6 C5
C4 C8
B2
+
R2
C10 C11
VDD
+
C12 C13
RF
INPUT Z1
Z2
Z3
L1
Z4 Z5
Z6
C2
C1
DUT
C3
Z7
C7
L2
Z8
RF
Z9 Z10 OUTPUT
C9
B1, B2
C1
C2
C3
C4
C5, C12
C6, C13
C7, C8
C9
C10
C11
L1, L2
R1, R2
Short Ferrite Beads
1 pF Chip Capacitor
4.7 pF Chip Capacitor
0.5 pF Chip Capacitor
3.9 pF Chip Capacitor
0.1 µF Chip Capacitors
470 µF, 63 V Electrolytic Chip Capacitors
0.3 pF Chip Capacitors
3.6 pF Chip Capacitor
22 µF Tantalum Chip Capacitor
5.1 pF Chip Capacitor
12.5 nH Inductors
12 Chip Resistors (1206)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Board
0.153x 0.087Microstrip
0.509x 0.156Microstrip
0.572x 0.087Microstrip
0.509x 0.232Microstrip
0.277x 0.143Microstrip
0.200x 0.305Microstrip
0.200x 0.511Microstrip
0.510x 0.328Microstrip
0.608x 0.081Microstrip
0.030Glass Teflon, TLX8-0300
Taconix (εr = 2.55)
Figure 1. MRF21030 Test Circuit Schematic
VBIAS
Ground
+
C6
C5
R1
B1
C4
C2 L1
C1 C3
R2
B2
C10
+
C12
C11
C13
C8
L2
C7 C9
MRF 21030
Rev 1
MRF21030
Rev–1
Figure 2. MRF21030 Test Circuit Component Layout
VSUPPLY
Ground
MOTOROLA RF DEVICE DATA
MRF21030R3 MRF21030SR3
3



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TYPICAL CHARACTERISTICS
60 -5
50
IRL
40
η
-10
-15
30 VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA
Two-Tone Measurement, 100 kHz Tone Spacing
20 Gps
-20
-25
10
IMD
-30
0 -35
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
30
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
25 Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
20
ACPR
15
Gps
η
10
5
01 2 3 4 5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
-20
-30
-40
-50
-60
-70
6
-25
VDD = 28 Vdc, f = 2140 MHz
-30
Two-Tone Measurement,
100 kHz Tone Spacing
-35 200 mA
-40 250 mA
-45 400 mA
300 mA
-50 350 mA
-55
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
100
16
400 mA
15 350 mA
300 mA
250 mA
14 200 mA
VDD = 28 Vdc, f = 2140 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
13
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 7. Power Gain versus Output Power
-20
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
Two-Tone Measurement,
-30 100 kHz Tone Spacing
3rd Order
-40
-50 5th Order
-60
7th Order
-70
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 6. Intermodulation Distortion Products
versus Output Power
15 -22
-24
14.5 -26
Gps -28
14
IMD
-30
-32
13.5
13
20
Pout = 30 W (PEP)
IDQ = 250 mA, f = 2140 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
22 24 26 28 30
VDD, DRAIN VOLTAGE (VOLTS)
32
-34
-36
-38
34
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF21030R3 MRF21030SR3
4
MOTOROLA RF DEVICE DATA



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MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS MRF21030R3
Motorola
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