MPS-U06 Datasheet PDF - ETC

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MPS-U06
ETC

Part Number MPS-U06
Description NPN Silicon Amplifier Transistor
Page 2 Pages


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tSsmi-Conaucto'i ZPioaueti, Line.
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MPS-U05 (SILICON)
MPS-U06
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN SILICON ANNULAR
AMPLIFIER TRANSISTORS
. . . designed for general-purpose, high-voltage amplifier anddriver
applications.
NPN SILICON
AMPLIFIER TRANSISTORS
BVcEO - 60 Vdc (Mini @> IQ - 1.0 mAdc - MPS-U06
80 Vdc(Min) @ lc = 1.0 mAdc - MPS-U06
• High Power Dissipation - PQ == 10 W @ TC = 25°C
• Complements to PNP MPS-U&5 and MPS-U56
f
MAXIMUM RATINGS
Riling
Collector-Emitter Voltage
Collector-Baie Voltage
Emitnr Ban Voltaos
Collector Currant - Continuout
Tonl Coww Dinipation e TA • 25°C
Derate above 25°C
Total PovMr Diulpation ® Tc « 25°C
Derate above 25°C
Operating andStorage Junction
Tamptrnura Range
Symbol
VQEQ
VCB
VEB
IG
PQ
PD
Tj,Tj,0
MPS-U06 MPS-U06
60 80
60 80
4.0
2.0
1.0
8.0
'0
80
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watn
mW/°C
°C
THERMAL CHARACTERISTICS
Charaettriitic
Symlwl Max
Therrrnl Rninanca, Junction to Cue
Thermal Retisunce, Junction to Ambiant
B9JC
R9JA<"
12.5
125
(1) R#JA >< measurad uvith tha device lolderad into a typical printed circuit board.
Unit
°C/W
°C/W
•— A —
F--^ — B--
vt-.
"^4-
3 21
HT
R—
t
Q
frc
L
i
D—
-G
•*
|
- STYLE 1
—\RL,
„ PIN 1. EM
" 2. BA,E
3- CO LLECTQ R
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 9.14 9.63 0.360 0.375
R 6.60 724 0.260 0.285
C S.4I s.e? 0.2 U 0.22;
u 0.38 0.53 _OJUi
F 3.19 3.33 0.12S P.1J1
G 2.S49SC
0.11 BSC
H 3.94 4.19 0.155 0.165
J 0.30 0.41 0.014 0.016
K 12.07 12.70 0.47S 0.60C
L 25.02 28.53
M 5.1 iiSC
A 2.39 2.69
0.985 1.005
dS BSC
0.094 0.106
B 1.14 1.40 0.045 0.055
CASE 152-02
NJ Semi-Conductors reserves the right to change test conditions,parameter limits and package dimensions without
notice. Information furnished bv N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verity that datasheets are current before placing orders.
Ouniitv



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MPS-U05, MPS-U06 (continued)
ELECTRICAL CHARACTERISTICS (TA = 26°C unless otherwise noted)
Characteriitic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc- 1.0 mAdc, IB = 0>
Emitter-Base Breakdown Voltage
MPS-U05
MPS-U06
BVCEO
BVEBO
60
80
4.0
TYP [
--
--
--
Collector Cutoff Current
(VCB - 40 Vdc. IE - 0)
IVCB - 60 Vdc. 1 E • 0)
MPS-U05
MPS-U06
ON CHARACTERISTICS
DC Current Gain ID
(>C - SO mAdc. VCE = 1.0 Vdcl
dC = 250 mAdc. VCE = 1-0 Vdc)
(lc = 500 mAdc, Vcg = 1.0 Vdc)
Collector-Emitter Saturation Voltage! 1 t
dC" 250 mAdc. IB = 10 mAdc)
(1C - 250 mAdc. IB - 25 mAdc)
Base-Emitter On Voltage (1)
(1C - 25O mAdc, VCE " svdcl
SMALL-SIGNALCHARACTERISTICS
Current-Gam-Bandwidth Product ( 1 )
|IC « 200 mAdc, VCE - 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB - 10 Vdc, IE = 0, f - 10O kHz>
Mtpulse Test: Pulse Width ^300 M*. Duty Cycle £2.0%,
FIGURE 1 -DC CURRENT GAIN
ICBO
"FE
VcElwt)
vBE(on)
*T
Cob
-
-
80
60
-
-
-
-
SO
-
-
-
125
100
55
0.18
0.1
0.74
170
6.0
1OO
100
-
-
0.4
-
1.2
-
12
FIGURE 2 - "ON" VOLTAGES
Vdc
Vdc
nAdc
-
Vdc
Vdc
MHt
pF
.0 2.D
S O 10
10
SO 100
1C. COLLECTOR CURRENT (mA)
JM
FIGURE 3 - DC SAFE OPERATING AREA
FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT
X
VCEr CCILLECTCIH £MITT£R VOLTAGE (VOLTS)
Thr^ -J14, t.vu limitations on the power handling ability of a
tran5'«*or: junction temperature and second breakdown. Safe
operating area curves indicate 'c V/£g limits of the trannstor that
mutt be obMrvad for rcNabl* operation; i e., the transistor must
not be subjected to greater dissipation than the curves indicate.
VCE ' 5 D Vac
TV ?5nC
1C. CDUECTOB CUHBENT (mAI
The data of Figure 3 is bawd on Tjipk] " 150°C; TC i* variable
depending on conditions. At high CAM temperatures, thermal
limitations will reduce the power that can be handled to value* lew
than the limitations imposed by second breakdown.



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