MPQ7043 Datasheet PDF - Motorola

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MPQ7043
Motorola

Part Number MPQ7043
Description Quad Amplifier Transistor
Page 2 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier
Transistors
NPN Silicon
14 13 12 11 10 9 8
COMPLEMENTARY
1234567
TYPE B
MAXIMUM RATINGS
Rating
Symbol MPQ7041 MPQ7042 MPQ7043 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current—Continuous
VCEO
VCBO
VEBO
IC
150
150
Each Die
200 250
200 250
5.0
500
Four Die
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
750
5.98
1700
13.6
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.25
10
3.2 Watts
25.6 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
100 167 °C/W
Effective, 4 Die 39 73.5 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
46
5.0
56 %
10 %
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MPQ7041
MPQ7042
MPQ7043
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPQ7041
MPQ7042
MPQ7043
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 150 Vdc, IE = 0)
(VCB = 180 Vdc, IE = 0)
MPQ7041
MPQ7042
MPQ7043
V(BR)EBO
ICBO
Min
150
200
250
150
200
250
5.0
MPQ7041
MPQ7042
MPQ7043*
*Motorola Preferred Device
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
Vdc
——
——
——
Vdc
——
——
——
Vdc
——
nAdc
— 100
— 100
— 100
Preferred devices are Motorola recommended choices for future use and best overall value.
2–518
Motorola Small–Signal Transistors, FETs and Diodes Device Data



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MPQ7041 MPQ7042 MPQ7043
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
hFE —
25 45 —
40 60 —
40 80 —
VCE(sat)
Vdc
— 0.3 0.5
Base – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
Vdc
— 0.7 0.9
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT MHz
50 80 —
Output Capacitance
(VCB = 20 Vdc, IE = 0, f =1.0 MHz)
Cobo
pF
— 2.5 5.0
Input Capacitance
(VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
pF
— 40 50
DC CHARACTERISTICS
200
VCE = 10 V
TJ = 125°C
100 25°C
70
–55°C
50
30
20
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 1. DC Current Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ IC/IB = 10 V
VCE(sat) @ IC/IB = 10
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 2. “ON” Voltages
5.0
50 70 100
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
1.0
IC/IB = 10
qVC FOR VCE(sat)
qVB FOR VBE
25°C TO 125°C
–55°C TO 25°C
–55°C TO 125°C
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–519



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