MMPQ3904 Datasheet PDF - Motorola

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MMPQ3904
Motorola

Part Number MMPQ3904
Description Quad Amplifier/Switch Transistor
Page 2 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier/Switch
Transistor
NPN Silicon
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCB
VEB
IC
40
60
6.0
200
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
0.4
3.2
800 mW
6.4 mW/°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
0.66
5.3
Watts
1.92
15.4 mW/°C
Operating and Storage
Junction Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
MMPQ3904
Motorola Preferred Device
16
1
CASE 751B–05, STYLE 4
SO–16
Min Typ Max Unit
40 — — Vdc
60 — — Vdc
6.0 —
— Vdc
— — 50 nAdc
— — 50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2–438
Motorola Small–Signal Transistors, FETs and Diodes Device Data



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MMPQ3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
Min Typ Max Unit
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
hFE
VCE(sat)
30 90 —
50 160 —
75 200 —
— 0.1 0.2 Vdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
— 0.65 0.85 Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT 250 300 — MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cob — 2.0 4.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib — 4.0 8.0 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 10 Vdc, VBE(off) = –0.5 Vdc, IB1 = 1.0 mAdc)
ton — 37 — ns
Turn–Off Time
(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
toff
— 136 —
ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–439



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