MMPQ2907A Datasheet PDF - Motorola

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MMPQ2907A
Motorola

Part Number MMPQ2907A
Description Quad General Purpose Transistor
Page 2 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad General Purpose
Transistors
PNP Silicon
MMPQ2907
MMPQ2907A
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
MAXIMUM RATINGS
Rating
Symbol MMPQ2907 MMPQ2907A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCB
VEB
IC
–40 –60
–60
–5.0
–600
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
0.52
4.2
1.0 Watts
8.0 mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
0.8
6.4
2.4 Watts
19.2 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
MMPQ2907
MMPQ2907A
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0)
MMPQ2907
MMPQ2907A
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
v1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
–40
–60
–60
–5.0
16
1
CASE 751B–05, STYLE 4
SO–16
Typ Max Unit
— — Vdc
——
— — Vdc
— — Vdc
nAdc
— –50
— –10
— –50 nAdc
REV 1
2–432
Motorola Small–Signal Transistors, FETs and Diodes Device Data



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MMPQ2907 MMPQ2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = –100 µAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –300 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
MMPQ2907A
MMPQ2907A
MMPQ2907/2907A
MMPQ2907/2907A
MMPQ2907/2907A
MMPQ2907/2907A
hFE
75 — —
100 —
75/100
100 — 300
30/50
50 — —
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
MMPQ2907
MMPQ2907
MMPQ2907
MMPQ2907
MMPQ2907
MMPQ2907A
VCE(sat)
Vdc
— — –0.4
— — –1.6
— — –1.6
VBE(sat)
Vdc
— — –1.3
— — –2.6
— — –2.6
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product(1)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT 200 350 — MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob — 6.0 — pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cib — 20 — pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc)
ton — 30 — ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc)
v1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.
toff
— 100 —
ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–433



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