MGBR20V50 Datasheet PDF - UNISONIC TECHNOLOGIES

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MGBR20V50
UNISONIC TECHNOLOGIES

Part Number MGBR20V50
Description MOS GATED BARRIER RECTIFIER
Page 3 Pages


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UNISONIC TECHNOLOGIES CO., LTD
MGBR20V50
Preliminary
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UT C MGBR20V50 is a surface mount mos gated barrier
rectifier, it uses U TC’s advanced technology to provid e customers
with low forward voltage drop and high switching speed etc.
The UTC MGBR20V50 suitable for supply applications.
FEATURES
* Very low forward voltage drop
* High switching speed
SYMBOL
DIODE
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR20V50L-TA2-T
MGBR20V50G-TA2-T
MGBR20V50L-K08-5060-R MGBR20V50G-K08-5060-R
Note: Pin Assignment: A: Anode, K: Cathode
Package
TO-220-2
DFN-8(5×6)
Pin Assignment
123 4 5678
Packing
K A - - - - - - Tube
A A A NC K K K K Tape Reel
MGBR20V50L-TA2-T
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2)Package Type
(2) TA2: TO-220-2, K08-5060: DFN-8(5×6)
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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MGBR20V50
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER SYMBOL
RATINGS
UNIT
DC Blocking Voltage
Working Peak Reverse Voltage
VRM 50
VRWM 50
V
V
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Rated VR-20Khz Square Wave) - 50% Duty Cycle
VRRM 50
IO 20
V
A
Peak Forward Surge Current - 1/2 60hz
Peak Repetitive Reverse Surge Current (2uS-1Khz)
IFSM 250
IRRM 2
A
A
Maximum Rate of Voltage Change ( at Rated VR )
Operating Junction Temperature
dv/dt
TJ -65~
10000
+150
V/μS
°C
Storage Junction Temperature
TSTG -65~
+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220-2
DFN-8(5×6)
SYMBOL
θJA
RATINGS
60
72
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Reverse Breakdown Voltage (Note 1)
V(BR)R IR=0.50mA 50
Forward Voltage
Reverse Current (Note 1)
VFM
IF=20A, TJ=25°C
IF=20A, TJ=125°C
IRM
VR=50V, TJ=25°C
VR=50V, TJ=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
MIN TYP MAX UNIT
V
0.58 V
0.53 V
500 µA
100 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MGBR20V50
Preliminary
DIODE
UTC a ssumes n o r esponsibility f or e quipment f ailures that r esult f rom u sing p roducts a t values th at
exceed, ev en momentarily, r ated values (s uch as maximum rati ngs, ope rating condition ra nges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not de signed for us e i n l ife support appliances, de vices or systems w here
malfunction of thes e products can be rea sonably expected to result in per sonal injury. R eproduction in
whole or i n par t is prohibited without the prior w ritten con sent of the co pyright owner. The information
presented i n this do cum ent does no t form part of any quotati on or contract, is believed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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