MGA-43228 Datasheet PDF - AVAGO

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MGA-43228
AVAGO

Part Number MGA-43228
Description 2.3 - 2.5 GHz 29dBm High Linearity Wireless Data Power Amplifier
Page 19 Pages


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MGA-43228
(2.3–2.5) GHz 29dBm High Linearity Wireless Data Power Amplifier
Data Sheet
Description
Avago Technologies’ MGA-43228 is a power amplifier for
use in the (2.3-2.5)GHz band. High linear output power
at 5V is achieved through the use of Avago Technologies’
proprietary 0.25um GaAs Enhancement-mode pHEMT
process. It is housed in a miniature 5.0mm x 5.0mm x
0.85mm 28-lead QFN package. It also includes shutdown
and switchable gain functions. A detector is also included
on-chip. The compact footprint coupled with high gain
and high efficiency make the MGA-43228 an ideal choice
as a power amplifier for IEEE 802.16 (WiMAX) and WLL
applications.
Component Image
5.0 x 5.0 x 0.85 mm3 28-lead QFN Package (Top View)
Features
 High gain: 38.5dB
 High linearity performance: 29.2dBm at 5V supply (2.5%
EVM, 64-QAM ¾ FEC rate OFDMA, 10MHz bandwidth)
 High efficiency: 16.1%
 Built-in detector and shutdown switches
 Switchable gain: 23.6dB attenuation using one single
CMOS compatible switch pin
 ETSI spectral mask compliant at 29dBm output power
 GaAs E-pHEMT Technology[1]
 Low cost small package size: 5.0 x 5.0 x 0.85 mm3
 MSL-2a and lead-free
 Usable at 3.3V supply for lower supply voltage
applications
Specifications
43228
YYWW
XXXX
RFin
Gnd
RFout
RFout
2.4GHz; Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 =
300, R4 = 1.2kas shown in Figure 36), Iqtotal = 500mA
RFout (typ), IEEE 802.16e 64-QAM OFDMA, ¾ FEC rate
Vbyp  38.5 dB Gain
 29.2 dBm Linear Pout (2.5% EVM)
Notes:
Package marking provides orientation and identification
”43228” = Device part number
”YYWW” = Year and work week
”XXXX” = Assembly lot number
 16.1% PAE @ Linear Pout
 2.6V Vdet @ Linear Pout
 23.6 dB Switchable Gain Attenuation
 25A Shutdown Current
Functional Block Diagram
Vdd1 Vdd2 Vdd3
RFin RFout
Gain switch and
bias circuitry
Applications
 High linearity amplifier for IEEE 802.16 fixed terminal
amplifier
 WLL amplifier
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Vbyp Vc1 Vc2 Vc3 Vbias Vdet
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Absolute Maximum Rating[1] TA=25°C
Symbol Parameter
Vdd, Vbias Supply voltages, bias supply voltage
Vc Control Voltage
Pin,max
Pdiss
Tj,MAX
TSTG
CW RF Input Power
Total Power Dissipation [3]
Junction Temperature
Storage Temperature
Units
V
V
dBm
W
°C
°C
Absolute Max.
6.0
(Vdd)
20
8.0
150
-65 to 150
Thermal Resistance
Thermal Resistance [2]
jc = 11.7°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-
Red Measurement Technique.
3. Board temperature (Tc) is 25°C, for Tc >56.4°C
derate the device power at 85.5mW per °C
rise in board temperature adjacent to
package bottom.
Electrical Specifications
TA = 25°C, Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 = 300, R4 = 1.2kas shown in Figure 36), Vbyp = 0V, Iqtotal
= 500mA, RF performance at 2.4 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, 10MHz bandwidth OFDMA operation unless
otherwise stated.
Symbol
Vdd
Iqtotal
Gain
OP1dB
Pout_5V
Itotal_5V
S11
S22
S12
Atten
Vdet
DetR
NF
S
Parameter and Test Condition
Supply Voltage
Quiescent Supply Current (normal high gain mode)
Quiescent Supply Current (low gain mode, Vbyp = 5.0V)
Gain
Output Power at 1dB Gain Compression
Linear Output Power @ 2.5% EVM with 64-QAM OFDMA
modulation per IEEE 802.16e specs, 50% duty cycle, ¾ rate FEC
Total current draw at Pout_5V level
Input Return Loss, 50source
Output Return Loss, 50source
Reverse Isolation
Gain attenuation in low gain mode
Detector output DC voltage @ 29dBm linear Pout
Detector RF dynamic range
Noise figure
Stability under load VSWR of 6:1 (all phase angle), spurious output
Units
V
mA
mA
dB
dBm
dBm
mA
dB
dB
dB
dB
V
dB
dB
dBc
Min.
35.0
27.7
20.5
Typ.
5.0
500
500
38.5
35.5
29.2
1023
-10
-11
60
23.6
2.6
20
2.1
Max.
1250
26.5
-60
2
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Product Consistency Distribution Charts[1]
LSL
CPK = 2.643,
Std Dev = 0.18
CPK = 2.008,
Std Dev = 0.038
USL
28 29 30
Figure 1. Pout_5V; LSL = 27.7dBm, Nominal = 29.2dBm
0.8 0.9 1 1.1
Figure 2. Itotal_5V; Nominal = 1.023A, USL = 1.250A
1.2
LSL LSL
CPK = 1.781,
USL
Std Dev = 0.653
CPK = 1.493,
Std Dev = 0.639
34 35 36 37 38 39 40 41 42
Figure 3. Gain; LSL = 35.0dB, Nominal = 38.5dB
20 21 22 23 24 25 26 27
Figure 4. Atten; LSL = 20.5dB, Nominal = 23.6dB, USL = 26.5dB; Vbyp = 5V
Note:
1. Distribution data sample size is 2000 samples taken from 3 different wafer lots. TA = 25°C, Vdd = Vbias = 5V, Vc = 2.1V (R2 = 1.2k, R3 = 300,
R4 = 1.2kas shown in Figure 36), Vbyp = 0V, RF performance at 2.4GHz unless otherwise stated. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
3
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Unless otherwise stated, all modulated signal measurements are made with IEEE 802.16e format as stated in the notes
to Figure 36.
MGA-43228 typical over-temperature performance at Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 = 300,
R4 = 1.2kas shown in Figure 36), Vbyp = 0V unless otherwise stated.
45
40
35
30
S21
25
20
15 85°C
10 25°C
5
0
-40°C
-5
-10
S22
-15
-20
S11
-25
1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency/GHz
Figure 5. Small-signal performance in high gain mode, Vbyp = 0V
30
25
20 S21
15
85°C
25°C
-40°C
10
5
0
-5 S11
-10
-15
-20 S22
-25
1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency/GHz
Figure 6. Small-signal performance in low-gain mode, Vbyp = 5V
5.0
4.5 85°C
4.0
25°C
-40°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10 12 14 16 18 20 22 24 26 28 30
Pout/dBm
Figure 7. Over-temperature EVM vs Pout @ 2.3GHz
1300
1200 85°C
1100
25°C
-40°C
1000
900
800
700
600
500
400
300
10 12 14 16 18 20 22 24 26 28 30
Pout/dBm
Figure 8. Over-temperature Idd_total vs Pout @ 2.3GHz
5.0
4.5 85°C
4.0
25°C
-40°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10 12 14 16 18 20 22 24 26 28 30
Pout/dBm
Figure 9. Over-temperature EVM vs Pout @ 2.4GHz
4
1300
1200 85°C
1100
25°C
-40°C
1000
900
800
700
600
500
400
300
10 12 14 16 18 20 22 24 26 28 30
Pout/dBm
Figure 10. Over-temperature Idd_total vs Pout @ 2.4GHz
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