ME08N20-G Datasheet PDF - Matsuki


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ME08N20-G
Matsuki

Part Number ME08N20-G
Description N-Channel 200V (D-S) MOSFET
Page 5 Pages

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N- Channel 200V (D-S) MOSFET
ME08N20/ME08N20-G
GENERAL DESCRIPTION
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower
field effect transistors ar e pr oduced using high cel l de nsity DMOS
trench technology. This high density process is especi ally tailored to
minimize on-state resist ance. These dev ices are p articularly su ited
for lo w volt age appl ication su ch as LCD i nverter, compute r po wer
management and DC to DC converter circu its which need low in-line
power loss.
FEATURES
RDS(ON)≦0.4@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Po wer Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
Secon dary Synchronous Rectification
PIN CONFIGURA TION
(TO-252-3L)
Top View
e Ordering Information: ME08N20 (Pb-free)
ME08N20-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter Sy
mbol
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current *
TC=25
TC=70
ID
Pulsed Drain Current
IDM 36
Maximum Power Dissipation
TC=25
TC=70
PD
Operating Junction Temperature
TJ
Thermal Resistance-Junction to Case*
RθJC 1.67
* Notes: The device mounted on 1in2 FR4 board with 2 oz copper
Maximum Ratings
9
7.2
74.9
47.9
-55 to 150
Unit
V
V
A
A
W
/W
Nov, 2012-Ver1.6
http://www.Datasheet4U.com
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N- Channel 200V (D-S) MOSFET
ME08N20/ME08N20-G
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol Parameter
Conditions
Min T yp Max
STATIC
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 200
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250μA 2
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
RDS(ON)
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
VDS=200V, VGS=0V
VGS=10V, ID= 5A
VSD Diode Forward Voltage
IS=9A, VGS=0V
4
±100
1
0.35 0.40
1.5
DYNAMIC
Qg Total Gate Charge
Qgs Gate-So
urce Charge
VDD=160V, VGS=10V, ID=9A
51.7
12.7
Qgd Gate-Drain
Charge
16.3
Ciss Input
capacitance
2610
Coss Out
put Capacitance
VDS=25V, VGS=0V, f=1MHz
68
Crss Rev
erse Transfer Capacitance
21
td(on)
Turn-On Delay Time
26.9
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDS=160V, VGS=10V,
RG=4.7, RL=17.7
37.2
63.5
tf Turn-On Fall Time
43.8
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b . Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
V
nc
pF
ns
Nov, 2012-Ver1.6
02



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N- Channel 200V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME08N20/ME08N20-G
Nov, 2012-Ver1.6
03



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N- Channel 200V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME08N20/ME08N20-G
Nov, 2012-Ver1.6
04




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