MCP1405 Datasheet PDF - Microchip Technology

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MCP1405
Microchip Technology

Part Number MCP1405
Description (MCP1403 - MCP1405) Low-side MOSFET Drivers
Page 22 Pages


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MCP1403/4/5
4.5A Dual High-Speed Power MOSFET Drivers
Features
• High Peak Output Current: 4.5A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns
- 5600 pF in 34 ns
• Short Delay Times: 40 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 1.0 mA (typ.)
- With Logic ‘0’ Input – 150 µA (typ.)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing
Up To 5V
• Packages: 8-Pin SOIC, PDIP, 8-Pin 6x5 DFN,
and 16-Pin SOIC
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP1403/4/5 are a family of dual-inverting, dual-
non-inverting, or complimentary output drivers. They
can delivery high peak currents of 4.5A typically into
capacitive loads. These devices also feature low shoot-
through current, matched rise/fall times and
propagation delays.
The MCP1403/4/5 drivers operate from a 4.5V to 18V
single power supply and can easily charge and
discharge 2200 pF gate capacitance in under 15 ns
(typ). They provide low enough impedances in both the
on and off states to ensure the MOSFETs intended
state will not be affected, even by large transients. The
input to the MCP1403/4/5 may be driven directly from
either TTL or CMOS (3V to 18V).
The MCP1403/4/5 dual-output 4.5A driver family is
offered in both surface-mount and pin-through-hole
packages with a -40oC to +125oC temperature rating.
The low thermal resistance of the thermally enhanced
DFN package allows for greater power dissipation
capability for driving heavier capacitive or resistive
loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin. All
terminals are fully protect against Electrostatic
Discharge (ESD) up to 4 kV.
Package Types
8-Pin
MCP1404
PDIP/SOIC MCP1403
MCP1405
NC 1
IN A 2
GND 3
IN B 4
8 NC
7 OUT A
6 VDD
5 OUT B
NC
OUT A
VDD
OUT B
NC
OUT A
VDD
OUT B
MCP1404
8-Pin DFN(2) MCP1403
MCP1405
NC 1
IN A 2
GND 3
IN B 4
8 NC
7 OUT A
6 VDD
5 OUT B
NC
OUT A
VDD
OUT B
NC
OUT A
VDD
OUT B
16-Pin SOIC
MCP1404
MCP1403
MCP1405
NC
IN A
NC
GND
GND
NC
IN B
NC
1
2
3
4
5
6
7
8
16 NC
15 OUT A
14 OUT A
13 VDD
12 VDD
11 OUT B
10 OUT B
9 NC
NC
OUT A
OUT A
VDD
VDD
OUT B
OUT B
NC
NC
OUT A
OUT A
VDD
VDD
OUT B
OUT B
NC
Note 1: Duplicate pins must both be connected for
proper operation.
2: Exposed pad of the DFN package is electrically
isolated.
© 2007 Microchip Technology Inc.
DS22022B-page 1



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Functional Block Diagram (1)
730 µA
300 mV
Inverting
Input
Effective
Input C = 20 pF
(Each Input)
GND
4.7V
Non-inverting
MCP1403 Dual Inverting
MCP1404 Dual Non-inverting
MCP1405 Inverting / Non-inverting
Note 1: Unused inputs should be grounded.
VDD
Output
DS22022B-page 2
© 2007 Microchip Technology Inc.



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MCP1403/4/5
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN>VDD)................................................50 mA
Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V VDD 18V.
Parameters
Sym Min Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
VIH 2.4 1.5 —
VIL — 1.3 0.8
IIN –1 — 1
VIN -5 — VDD+0.3
VOH
VOL
ROH
ROL
IPK
IREV
VDD – 0.025
2.2
2.8
4.5
>1.5
0.025
3.0
3.5
tR — 15 28
Fall Time
tF — 18 28
Delay Time
Delay Time
Power Supply
tD1 — 40
tD2 — 40
Supply Voltage
VDD 4.5
Power Supply Current
IS
IS
Note 1: Switching times ensured by design.
1.0
0.15
2: Tested during characterization, not production tested.
48
48
18.0
2.0
0.25
V
V
µA 0V VIN VDD
V
V DC Test
V DC Test
Ω IOUT = 10 mA, VDD = 18V
Ω IOUT = 10 mA, VDD = 18V
A VDD = 18V (Note 2)
A Duty cycle 2%, t 300 µsec.
ns Figure 4-1, Figure 4-2
CL = 2200 pF
ns Figure 4-1, Figure 4-2
CL = 2200 pF
ns Figure 4-1, Figure 4-2
ns Figure 4-1, Figure 4-2
V
mA VIN = 3V (Both Inputs)
mA VIN = 0V (Both Inputs)
© 2007 Microchip Technology Inc.
DS22022B-page 3



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DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD 18V.
Parameters
Sym
Min
Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
VIH
VIL
IIN
2.4
–10
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
VOH
VOL
ROH
ROL
VDD – 0.025
Rise Time
tR
3.1
3.7
25
0.8
+10
0.025
6.0
7
40
Fall Time
tF
25 40
Delay Time
Delay Time
Power Supply
tD1
tD2
50 65
50 65
Power Supply Current
IS — 2.0 3.0
— 0.2 0.3
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
V
V
µA 0V VIN VDD
V DC TEST
V DC TEST
Ω IOUT = 10 mA, VDD = 18V
Ω IOUT = 10 mA, VDD = 18V
ns Figure 4-1, Figure 4-2
CL = 2200 pF
ns Figure 4-1, Figure 4-2
CL = 2200 pF
ns Figure 4-1, Figure 4-2
ns Figure 4-1, Figure 4-2
mA VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters
Sym Min
Typ
Max Units
Conditions
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
TA –40 —
TJ — —
TA –65 —
+125
+150
+150
°C
°C
°C
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 16L-SOIC
θJA
θJA
θJA
θJA
— 33.2
— 125
— 155
— 155
— °C/W Typical four-layer board with
vias to ground plane
— °C/W
— °C/W
— °C/W 4-Layer JC51-7 Standard
Board, Natural Convection
DS22022B-page 4
© 2007 Microchip Technology Inc.



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