MC74VHC1GT32 Datasheet PDF - ON Semiconductor

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MC74VHC1GT32
ON Semiconductor

Part Number MC74VHC1GT32
Description 2-Input OR Gate/CMOS Logic Level Shifter
Page 8 Pages


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MC74VHC1GT32
2-Input OR Gate/CMOS
Logic Level Shifter
The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR
gate fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while maintaining
CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The device input is compatible with TTL–type input thresholds and the
output has a full 5 V CMOS level output swing. The input protection
circuitry on this device allows overvoltage tolerance on the input,
allowing the device to be used as a logic–level translator from 3.0 V
CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V
CMOS Logic while operating at the high–voltage power supply.
The MC74VHC1GT32 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GT32 to be used to interface 5 V circuits to 3 V
circuits. The output structures also provide protection when VCC = 0 V.
These input and output structures help prevent device destruction caused
by supply voltage – input/output voltage mismatch, battery backup, hot
insertion, etc.
High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 2 µA (Max) at TA = 25°C
TTL–Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
CMOS–Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 65; Equivalent Gates = 15
IN B 1
5 VCC
IN A 2
GND 3
4 OUT Y
Figure 1. Pinout (Top View)
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MARKING
DIAGRAMS
SC–88A / SOT–353/SC–70
DF SUFFIX
CASE 419A
VNd
Pin 1
d = Date Code
TSOP–5/SOT–23/SC–59
DT SUFFIX
CASE 483
VNd
Pin 1
d = Date Code
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5 VCC
FUNCTION TABLE
Inputs
Output
AB
LL
LH
HL
HH
Y
L
H
H
H
IN A 1
IN B OUT Y
Figure 2. Logic Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 4
1
Publication Order Number:
MC74VHC1GT32/D



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MC74VHC1GT32
MAXIMUM RATINGS (Note 1)
Symbol
Characteristics
Value
Unit
VCC
VIN
VOUT
DC Supply Voltage
DC Input Voltage
DC Output Voltage
VCC = 0
High or Low State
–0.5 to +7.0
–0.5 to +7.0
–0.5 to 7.0
–0.5 to VCC + 0.5
V
V
V
IIK
IOK
IOUT
ICC
PD
qJA
TL
TJ
Tstg
VESD
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, VCC and GND
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
VOUT < GND; VOUT > VCC
SC–88A, TSOP–5
SC–88A, TSOP–5
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
–20
+20
+25
+50
200
333
260
+150
–65 to +150
> 2000
> 200
N/A
mA
mA
mA
mA
mW
_C/W
°C
°C
°C
V
ILatch–Up Latch–Up Performance
Above VCC and Below GND at 125°C (Note 5)
±500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
VCC
VIN
VOUT
DC Supply Voltage
DC Input Voltage
DC Output Voltage
TA
tr , tf
Operating Temperature Range
Input Rise and Fall Time
VCC = 0
High or Low State
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Min
3.0
0.0
0.0
0.0
–55
0
0
Max
5.5
5.5
5.5
VCC
+125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1 10
100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction
Temperature
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MC74VHC1GT32
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
(V)
TA = 25°C
Min Typ Max
TA 85°C –55 TA 125°C
Min Max Min
Max Unit
VIH Minimum High–Level
Input Voltage
3.0 1.4
4.5 2.0
5.5 2.0
1.4 1.4
2.0 2.0
2.0 2.0
V
VIL Maximum Low–Level
Input Voltage
3.0
0.53 0.53
0.53 V
4.5
0.8 0.8
0.8
5.5
0.8 0.8
0.8
VOH
VOL
IIN
Minimum High–Level VIN = VIH or VIL
3.0 2.9 3.0
2.9
2.9
Output Voltage
IOH = –50 µA
4.5 4.4 4.5
4.4
4.4
VIN = VIH or VIL
VIN = VIH or VIL
IOH = –4 mA
3.0 2.58
2.48 2.34
IOH = –8 mA
4.5 3.94
3.80 3.66
V
V
Maximum Low–Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 50 µA
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
3.0
4.5
0.0 0.1
0.0 0.1
0.36
0.36
0.1
0.1
0.44
0.44
0.1 V
0.1
V
0.52
0.52
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1 ±1.0
±1.0 µA
ICC Maximum Quiescent VIN = VCC or GND 5.5
Supply Current
2.0 20
40 µA
ICCT
Quiescent Supply
Current
Input: VIN = 3.4 V
5.5
1.35 1.50
1.65 mA
IOPD
Output Leakage
Current
VOUT = 5.5 V
0.0
0.5 5.0
10 µA
AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHL
Maximum
Propogation Delay,
Input A or B to Y
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.8 7.9
6.1 11.4
3.7 5.5
4.4 7.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCIN MaximumInput
Capacitance
5.5 10
TA 85°C
Min Max
9.5
13.0
6.5
8.5
10
–55 TA 125°C
Min Max
11.5
15.5
8.0
10.0
10
Unit
ns
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTypical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Note 6)
11 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
pAovwereargceoonpseurmatpintigoncu; rPreDnt=cCanPbDeoVbtCaCin2edbfiynth+eICeqCuatVioCn:CIC. C(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no–load dynamic
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MC74VHC1GT32
Input A or B 50%
tPLH
Output Y
50% VCC
GND
tPHL
50% VCC
VOH
VOL
Figure 4. Switching Waveforms
DEVICE
UNDER
TEST
TEST POINT
OUTPUT
CL*
*Includes all probe and jig capacitance
Figure 5. Test Circuit
DEVICE ORDERING INFORMATION
Device Order Number
Circuit
Indicator
Temp
Range
Identifier
Device Nomenclature
Device Package
Technology Function Suffix
Tape &
Reel
Suffix
MC74VHC1GT32DFT1
MC
74 VHC1G T32 DF T1
MC74VHC1GT32DFT2
MC
74 VHC1G T32 DF T2
MC74VHC1GT32DTT1
MC
74 VHC1G T32 DT T1
Package
Type
SC–88A /
SOT–353
/ SC–70
SC–88A /
SOT–353
/ SC–70
TSOPS /
SOT–23
/ SC–59
Tape and Reel
Size
178 mm (7”)
3000 Unit
178 mm (7”)
3000 Unit
178 mm (7”)
3000 Unit
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