MC74VHC1G132 Datasheet PDF - ON Semiconductor

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MC74VHC1G132
ON Semiconductor

Part Number MC74VHC1G132
Description 2-Input NAND Schmitt-Trigger
Page 8 Pages


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MC74VHC1G132
2-Input NAND
Schmitt-Trigger
The MC74VHC1G132 is a single gate CMOS Schmitt NAND
trigger fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The MC74VHC1G132 input structure provides protection when
voltages up to 7V are applied, regardless of the supply voltage. This
allows the MC74VHC1G132 to be used to interface 5V circuits to 3V
circuits.
The MC74VHC1G132 can be used to enhance noise immunity or to
square up slowly changing waveforms.
High Speed: tPD = 3.6ns (Typ) at VCC = 5V
Low Power Dissipation: ICC = 2µA (Max) at TA = 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000V
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SC–88A / SOT–353
DF SUFFIX
CASE 419A
MARKING DIAGRAM
VDd
Pin 1
d = Date Code
IN B 1
IN A 2
GND 3
5 VCC
4 OUT Y
Figure 1. 5–Lead SOT–353 Pinout (Top View)
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5 VCC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
LOGIC SYMBOL
IN A &
IN B
OUT Y
FUNCTION TABLE
Inputs
AB
LL
LH
HL
HH
Output
Y
H
H
H
L
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 3
1
Publication Order Number:
MC74VHC1G132/D



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MC74VHC1G132
MAXIMUM RATINGS*
Characteristics
Symbol
Value
Unit
DC Supply Voltage
VCC
–0.5 to +7.0
V
DC Input Voltage
VIN
–0.5 to +7.0
V
DC Output Voltage
VCC = 0
High or Low State
VOUT
–0.5 to 7.0
–0.5 to VCC + 0.5
V
Input Diode Current
IIK –20 mA
Output Diode Current
(VOUT < GND; VOUT > VCC)
IOK
+20 mA
DC Output Current, per Pin
IOUT
+25 mA
DC Supply Current, VCC and GND
ICC +50 mA
Power dissipation in still air, SC–88A †
PD 200 mW
Lead temperature, 1 mm from case for 10 s
TL 260 °C
Storage temperature
Tstg
–65 to +150
°C
* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
†Derating — SC–88A Package: –3 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Characteristics
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Symbol Min Max Unit
VCC
VIN
VOUT
TA
4.5 5.5 V
0.0 5.5 V
0.0 VCC V
–55 +85 °C
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MC74VHC1G132
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
(V)
TA = 25°C
Min Typ Max
TA 85°C
Min Max
TA 125°C
Min Max
Unit
VT+ Positive Threshold
Voltage
3.0 1.50 1.88 2.25 1.50 2.25 1.50 2.25
4.5 2.35 2.66 3.10 2.35 3.10 2.35 3.10
5.5 2.80 3.21 3.70 2.80 3.70 2.80 3.70
V
VT– Negative Threshold
Voltage
3.0 0.65 1.03 1.40 0.65 1.40 0.65 1.40
4.5 1.10 1.62 2.10 1.10 2.10 1.10 2.10
5.5 1.45 2.02 2.60 1.45 2.60 1.45 2.60
V
VH Hysteresis Voltage
3.0 0.30 0.85 1.60 0.30 1.60 0.30 1.60
4.5 0.40 1.05 2.00 0.40 2.00 0.40 2.00
5.5 0.50 1.20 2.25 0.50 2.25 0.50 2.25
V
VOH
VOL
Minimum High–Level
Output Voltage
IOH = –50µA
VIN = VIH or VIL
IOH = –50µA
Maximum Low–Level
Output Voltage
IOH = –4mA
IOH = –8mA
VIN = VIH or VIL
IOL = 50µA
2.0 1.9 2.0 1.9 1.9
3.0 2.9 3.0 2.9 2.9
4.5 4.4 4.5 4.4 4.4
3.0 2.58
4.5 3.94
2.0 0.0
3.0 0.0
4.5 0.0
2.48 2.34
3.80 3.66
0.1 0.1 0.1
0.1 0.1 0.1
0.1 0.1 0.1
V
V
V
IOL = 4mA
IOL = 8mA
3.0
4.5
IIN Maximum Input VIN = 5.5V or GND 0 to
Leakage Current
5.5
V
0.36 0.44 0.52
0.36 0.44 0.52
±0.1 ±1.0 ±1.0 µA
ICC Maximum Quiescent VIN = VCC or GND
5.5
2.0 20 40 µA
Supply Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr/tf = 3.0ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHL
Maximum
Propogation Delay, A
or B to Y
VCC = 3.3 ± 0.3V
VCC = 5.0 ± 0.5V
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.6 11.9
6.1 15.4
3.6 7.7
4.3 9.7
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCIN MaximumInput
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCapacitance
5.5 10
TA 85°C
Min Max
1.0 14.0
1.0 17.5
1.0 9.0
1.0 11.0
10
TA 125°C
Min Max
1.0 16.1
1.0 19.6
1.0 10.3
1.0 12.3
10
Unit
ns
pF
Typical @ 25°C, VCC = 5.0V
CPD
Power Dissipation Capacitance (Note 1.)
11 pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no–load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.
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MC74VHC1G132
A or B
50%
tPLH
VCC
GND
tPHL
DEVICE
UNDER
TEST
TEST POINT
OUTPUT
CL*
Y 50% VCC
*Includes all probe and jig capacitance
Figure 2. Switching Waveforms
Figure 3. Test Circuit
DEVICE ORDERING INFORMATION
Device Order Number
Circuit
Indicator
Temp
Range
Identifier
Device Nomenclature
Device Package
Technology Function Suffix
Tape &
Reel
Suffix
MC74VHC1G132DFT1
MC
74 VHC1G 132 DF T1
Package
Type
SC–88A /
SOT–353
Tape and Reel
Size
7–Inch/3000 Unit
PACKAGE DIMENSIONS
A
G
SC–88A / SOT–353
DF SUFFIX
5–LEAD SOT–353 PACKAGE
CASE 419A–01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MM.
V
54
S –B–
1 23
D 5 PL
0.2 (0.008) M B M
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.031 0.043
D 0.004 0.012
G 0.026 BSC
H ––– 0.004
J 0.004 0.010
K 0.004 0.012
N 0.008 REF
S 0.079 0.087
V 0.012 0.016
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.80 1.10
0.10 0.30
0.65 BSC
––– 0.10
0.10 0.25
0.10 0.30
0.20 REF
2.00 2.20
0.30 0.40
N 0.5 mm (min)
C
H
J
K
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
1.9 mm
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